| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Ayvazyan, Gagik
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (3/3 displayed)
Places of action
| Organizations | Location | People |
|---|
article
Optimization of surface reflectance for silicon solar cells
Abstract
<jats:p>A study on the formation of black silicon (b-Si) antireflection layers on crystalline Si wafers using SF<jats:sub>6</jats:sub>/O<jats:sub>2</jats:sub>gas mixture in a reactive ion etching method is presented. The process is low-temperature, fast and does not depend on the crystallographic orientation of the Si wafer. The b-Si layers have demonstrated average reflectance values of 4% and 5% for monoand polycrystalline Si wafers respectively, feature that is suitable for the fabrication of high efficiency solar cells. Passivation of b-Si antireflection layers by suitable different thin films can significantly reduce needle-like surface recombination losses.</jats:p>