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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Souqui, Laurent
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Topics
Publications (8/8 displayed)
- 2024On the origin of epitaxial rhombohedral-B4C growth by CVD on 4H-SiC†citations
- 2024On the origin of epitaxial rhombohedral-B<sub>4</sub>C growth by CVD on 4H-SiCcitations
- 2023Chemical vapor deposition of amorphous boron carbide coatings from mixtures of trimethylboron and triethylboroncitations
- 2022Texture evolution in rhombohedral boron carbide films grown on 4H-SiC(0001) and 4H-SiC(0001) substrates by chemical vapor depositioncitations
- 2022Chemical vapor deposition of sp<sup>2</sup>-boron nitride films on Al<sub>2</sub>O<sub>3</sub> (0001), (112¯0), (11¯02), and (101¯0) substratescitations
- 2020Chemical vapor deposition of sp(2)-boron nitride on Si(111) substrates from triethylboron and ammonia: Effect of surface treatmentscitations
- 2017Gas Phase Chemistry of Trimethylboron in Thermal Chemical Vapor Depositioncitations
- 2017Gas Phase Chemistry of Trimethylboron in Thermal Chemical Vapor Depositioncitations
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article
On the origin of epitaxial rhombohedral-B<sub>4</sub>C growth by CVD on 4H-SiC
Abstract
<jats:p>We use atomic scale analytical transmission electron microscopy techniques to study the film/substrate interface in epitaxial growth of rhombohedral-B<jats:sub>4</jats:sub>C on 4H-SiC. We note that the interface is atomically smooth without signs of any interlayer.</jats:p>