Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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Souqui, Laurent

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (8/8 displayed)

  • 2024On the origin of epitaxial rhombohedral-B4C growth by CVD on 4H-SiC†2citations
  • 2024On the origin of epitaxial rhombohedral-B<sub>4</sub>C growth by CVD on 4H-SiC2citations
  • 2023Chemical vapor deposition of amorphous boron carbide coatings from mixtures of trimethylboron and triethylboron1citations
  • 2022Texture evolution in rhombohedral boron carbide films grown on 4H-SiC(0001) and 4H-SiC(0001) substrates by chemical vapor deposition6citations
  • 2022Chemical vapor deposition of sp<sup>2</sup>-boron nitride films on Al<sub>2</sub>O<sub>3</sub> (0001), (112¯0), (11¯02), and (101¯0) substrates5citations
  • 2020Chemical vapor deposition of sp(2)-boron nitride on Si(111) substrates from triethylboron and ammonia: Effect of surface treatments3citations
  • 2017Gas Phase Chemistry of Trimethylboron in Thermal Chemical Vapor Deposition21citations
  • 2017Gas Phase Chemistry of Trimethylboron in Thermal Chemical Vapor Deposition21citations

Places of action

Chart of shared publication
Pedersen, Henrik
7 / 42 shared
Persson, Per
2 / 16 shared
Palisaitis, Justinas
2 / 41 shared
Sharma, Sachin
3 / 6 shared
Högberg, Hans
7 / 37 shared
Ivanov, Ivan G.
2 / 7 shared
Hoang, Duc Quang
2 / 4 shared
Tonner, Ralf
2 / 4 shared
Imam, Mewlude
2 / 6 shared
Birch, Jens
2 / 73 shared
Schmidt, Susann
2 / 21 shared
Stegmueller, Andreas
2 / 3 shared
Herritsch, Jan
2 / 2 shared
Hall-Wilton, Richard
2 / 6 shared
Höglund, Carina
1 / 13 shared
Hoglund, Carina
1 / 2 shared
Chart of publication period
2024
2023
2022
2020
2017

Co-Authors (by relevance)

  • Pedersen, Henrik
  • Persson, Per
  • Palisaitis, Justinas
  • Sharma, Sachin
  • Högberg, Hans
  • Ivanov, Ivan G.
  • Hoang, Duc Quang
  • Tonner, Ralf
  • Imam, Mewlude
  • Birch, Jens
  • Schmidt, Susann
  • Stegmueller, Andreas
  • Herritsch, Jan
  • Hall-Wilton, Richard
  • Höglund, Carina
  • Hoglund, Carina
OrganizationsLocationPeople

article

On the origin of epitaxial rhombohedral-B<sub>4</sub>C growth by CVD on 4H-SiC

  • Pedersen, Henrik
  • Persson, Per
  • Souqui, Laurent
  • Palisaitis, Justinas
  • Sharma, Sachin
  • Högberg, Hans
  • Ivanov, Ivan G.
  • Hoang, Duc Quang
Abstract

<jats:p>We use atomic scale analytical transmission electron microscopy techniques to study the film/substrate interface in epitaxial growth of rhombohedral-B<jats:sub>4</jats:sub>C on 4H-SiC. We note that the interface is atomically smooth without signs of any interlayer.</jats:p>

Topics
  • impedance spectroscopy
  • transmission electron microscopy
  • chemical vapor deposition