| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Khan, Ramsha
Tampere University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2024Laterally Bound Co Porphyrin on CdTe QD : A Long-Lived Charge-Separated Nanocompositecitations
- 2024Contactless analysis of surface passivation and charge transfer at the TiO 2-Si interfacecitations
- 2024Contactless analysis of surface passivation and charge transfer at the TiO 2-Si interfacecitations
- 2024Transient Absorption Spectroscopy of Filmscitations
- 2024Contactless analysis of surface passivation and charge transfer at the TiO2-Si interfacecitations
- 2023Laterally Bound Co Porphyrin on CdTe QD : A Long-Lived Charge-Separated Nanocompositecitations
- 2023Is Carrier Mobility a Limiting Factor for Charge Transfer in Tio2/Si Devices? A Study by Transient Reflectance Spectroscopycitations
- 2022Controlling the Wettability of ZnO Thin Films by Spray Pyrolysis for Photocatalytic Applicationscitations
- 2022Tunable Ti3+-Mediated Charge Carrier Dynamics of Atomic Layer Deposition-Grown Amorphous TiO2citations
- 2021Comparison of the heat-treatment effect on carrier dynamics in TiO2 thin films deposited by different methodscitations
- 2020Optimization of photogenerated charge carrier lifetimes in ald grown tio2 for photonic applicationscitations
- 2020Graphene-ferrites interaction for enhanced EMI shielding effectiveness of hybrid polymer compositescitations
- 2019EMI shielding properties of polymer blends with inclusion of graphene nano plateletscitations
Places of action
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article
Contactless analysis of surface passivation and charge transfer at the TiO 2-Si interface
Abstract
<p>Transition metal oxides are pivotal in enhancing surface passivation and facilitating charge transfer (CT) in silicon based photonic devices, improving their efficacy and affordability through interfacial engineering. This study investigates TiO<sub>2</sub>/Si heterojunctions prepared by atomic layer deposition (ALD) with different pre-ALD chemical and post-ALD thermal treatments, exploring their influence on the surface passivation and the correlation with the CT at the TiO<sub>2</sub>-Si interface. Surface passivation quality is evaluated by the photoconductance decay method to study the effective carrier lifetime, while CT from Si to TiO<sub>2</sub> is examined by transient reflectance spectroscopy. Surprisingly, the as-deposited TiO<sub>2</sub> on HF-treated n-Si (without interfacial SiO<sub>x</sub>) demonstrates superior surface passivation with an effective lifetime of 1.23 ms, twice that of TiO<sub>2</sub>/SiO<sub>x</sub>/n-Si, and a short characteristic CT time of 200 ps, tenfold faster than that of TiO<sub>2</sub>/SiO<sub>x</sub>/n-Si. Post-ALD annealing at temperatures approaching the TiO<sub>2</sub> crystallization onset re-introduces the SiO<sub>x</sub> layers in HF-treated samples and induces chemical and structural changes in all the samples which decrease passivation and prolong the CT time and are hence detrimental to the photonic device performance.</p>