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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Liu, Xiaolong
Aalto University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2024Wetting Properties of Black Silicon Layers Fabricated by Different Techniquescitations
- 2024(invited talk) Sulfur-hyperdoped silicon by ultrashort laser processing
- 2024Contactless analysis of surface passivation and charge transfer at the TiO 2-Si interfacecitations
- 2024Contactless analysis of surface passivation and charge transfer at the TiO 2-Si interfacecitations
- 2024Impact of post-ion implantation annealing on Se-hyperdoped Gecitations
- 2024Impact of post-ion implantation annealing on Se-hyperdoped Gecitations
- 2024Bridging the gap between surface physics and photonicscitations
- 2024Contactless analysis of surface passivation and charge transfer at the TiO2-Si interfacecitations
- 2023(oral talk) Effective carrier lifetime in ultrashort pulse laser hyperdoped silicon: dopant concentration dependence and practical upper limits
- 2023Excellent Responsivity and Low Dark Current Obtained with Metal-Assisted Chemical Etched Si Photodiodecitations
- 2023Properties of Black Silicon Layers Fabricated by Different Techniques for Solar Cell Applicationscitations
- 2022Perspectives on Black Silicon in Semiconductor Manufacturing: Experimental Comparison of Plasma Etching, MACE and Fs-Laser Etchingcitations
- 2022Millisecond-Level Minority Carrier Lifetime in Femtosecond Laser-Textured Black Siliconcitations
Places of action
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article
Contactless analysis of surface passivation and charge transfer at the TiO 2-Si interface
Abstract
<p>Transition metal oxides are pivotal in enhancing surface passivation and facilitating charge transfer (CT) in silicon based photonic devices, improving their efficacy and affordability through interfacial engineering. This study investigates TiO<sub>2</sub>/Si heterojunctions prepared by atomic layer deposition (ALD) with different pre-ALD chemical and post-ALD thermal treatments, exploring their influence on the surface passivation and the correlation with the CT at the TiO<sub>2</sub>-Si interface. Surface passivation quality is evaluated by the photoconductance decay method to study the effective carrier lifetime, while CT from Si to TiO<sub>2</sub> is examined by transient reflectance spectroscopy. Surprisingly, the as-deposited TiO<sub>2</sub> on HF-treated n-Si (without interfacial SiO<sub>x</sub>) demonstrates superior surface passivation with an effective lifetime of 1.23 ms, twice that of TiO<sub>2</sub>/SiO<sub>x</sub>/n-Si, and a short characteristic CT time of 200 ps, tenfold faster than that of TiO<sub>2</sub>/SiO<sub>x</sub>/n-Si. Post-ALD annealing at temperatures approaching the TiO<sub>2</sub> crystallization onset re-introduces the SiO<sub>x</sub> layers in HF-treated samples and induces chemical and structural changes in all the samples which decrease passivation and prolong the CT time and are hence detrimental to the photonic device performance.</p>