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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Parish, James
University of Bath
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2023Multi-pulse atomic layer deposition of p-type SnO thin filmscitations
- 2021Evaluation of Sn(II) Aminoalkoxide Precursors for Atomic Layer Deposition of SnO Thin Films.citations
- 2021Tin(II) Ureide Complexescitations
- 2021Atomic layer deposition method of metal (II), (0), or (IV) containing film layer
- 2019Aerosol-Assisted Chemical Vapor Deposition of ZnS from Thioureide Single Source Precursorscitations
- 2019Aerosol-Assisted Chemical Vapor Deposition of ZnS from Thioureide Single Source Precursorscitations
- 2019Synthetic, Structural and Computational Studies on Heavier Tetragen and Chalcogen Triazenide Complexescitations
- 2018Synthesis, Characterisation and Thermal Properties of Sn(II) Pyrrolide Complexescitations
- 2018Recent developments in molecular precursors for atomic layer depositioncitations
- 2017Aerosol-Assisted chemical vapor deposition of cds from xanthate single source precursorscitations
- 2016Aerosol-assisted CVD of SnO from stannous alkoxide precursorscitations
Places of action
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article
Multi-pulse atomic layer deposition of p-type SnO thin films
Abstract
<p>This work demonstrates p-type SnO thin film transistors, where the SnO active layers were deposited with atomic layer deposition (ALD) using the Sn(ii) alkoxide precursor, Sn(ii) bis(tert-butoxide). The deposition optimisation explores the use of multiple Sn pulses per ALD cycle and the use of an exposure mode (where the pump extraction is paused before the Sn precursor purge) to increase the residence time and allow for more effective saturation of the surface. The fabricated devices required post deposition annealing of the active layer, with device performance further improved by back-channel passivation using ALD Al<sub>2</sub>O<sub>3</sub>. The performance of devices deposited using the varying precursor delivery modes has also been compared, with the devices utilizing deposition with multiple Sn pulses and a post deposition anneal at 250 °C achieving an on/off ratio of ∼4 × 10<sup>4</sup> and field effect mobility (μ<sub>FE</sub>) of 0.6 cm<sup>2</sup> (V s)<sup>−1</sup>. The growth processes present during deposition with the different precursor delivery modes was investigated using fractal geometry and topographical scaling methods, with the poor device performance for the single Sn pulse deposition attributed to 2D lateral island growth.</p>