| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Johnson, Andrew L.
University of Bath
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (40/40 displayed)
- 2024Zinc and cadmium thioamidate complexes:rational design of single-source precursors for the AACVD of ZnScitations
- 2024Plasma-Enhanced Atomic Layer Deposition of Hematite for Photoelectrochemical Water Splitting Applications
- 2023Multi-pulse atomic layer deposition of p-type SnO thin filmscitations
- 2022N-O Ligand Supported Stannylenescitations
- 2021Evaluation of Sn(II) Aminoalkoxide Precursors for Atomic Layer Deposition of SnO Thin Films.citations
- 2021Tin(II) Ureide Complexes:Synthesis, Structural Chemistry and Evaluation as SnO precursorscitations
- 2021Atomic scale surface modification of TiO2 3D nano-arrays : plasma enhanced atomic layer deposition of NiO for photocatalysiscitations
- 2021Tin(II) Ureide Complexescitations
- 2021Atomic layer deposition method of metal (II), (0), or (IV) containing film layer
- 2019Aerosol-Assisted Chemical Vapor Deposition of ZnS from Thioureide Single Source Precursorscitations
- 2019Synthetic, Structural and Computational Studies on Heavier Tetragen and Chalcogen Triazenide Complexescitations
- 2019Evaluation of AA-CVD deposited phase pure polymorphs of SnS for thin films solar cellscitations
- 2018Synthesis, Characterisation and Thermal Properties of Sn(II) Pyrrolide Complexescitations
- 2018Oxidative Addition to Sn(II) Guanidinate Complexes: Precursors to Tin(II) Chalcogenide Nanocrystalscitations
- 2018Recent developments in molecular precursors for atomic layer depositioncitations
- 2018Tin Guanidinato Complexes: Oxidative Control of Sn, SnS, SnSe and SnTe Thin Film Depositioncitations
- 2017Deposition of SnS Thin Films from Sn(II) Thioamidate Precursorscitations
- 2017Aerosol-Assisted chemical vapor deposition of cds from xanthate single source precursorscitations
- 2016Aerosol-assisted CVD of SnO from stannous alkoxide precursorscitations
- 2016Synthesis, Structure and CVD Studies of the Group 13 Complexes [Me 2 M{tfacnac}] [M = Al, Ga, In; Htfacnac = F 3 CC(OH)CHC(CH 3 )NCH 2 CH 2 OCH 3 ]citations
- 2016Cobalt(I) olefin complexes:precursors for metal-organic chemical vapor deposition of high purity cobalt metal thin filmscitations
- 2016Homoleptic zirconium amidatescitations
- 2016Synthesis, Structure and CVD Studies of the Group 13 Complexes [Me2M{tfacnac}] [M = Al, Ga, In; Htfacnac = F3CC(OH)CHC(CH3)NCH2CH2OCH3]citations
- 2015Tailoring precursors for depositioncitations
- 2015Synthesis and characterization of fluorinated β-ketoiminate zinc precursors and their utility in the AP-MOCVD growth of ZnO:Fcitations
- 2015Synthesis and characterization of fluorinated β-ketoiminate zinc precursors and their utility in the AP-MOCVD growth of ZnO:Fcitations
- 2015Polymorph-Selective Deposition of High Purity SnS Thin Films from a Single Source Precursorcitations
- 2014Single-source AACVD of composite cobalt-silicon oxide thin filmscitations
- 2014The first crystallographically-characterised Cu(II) xanthatecitations
- 2013Synthesis of heterobimetallic tungsten acetylacetonate/alkoxide complexes and their application as molecular precursors to metal tungstatescitations
- 2013Development of metal chalcogenide precursors for use in chemical vapour deposition (CVD) and colloidal nano particle synthesis
- 2013CVD of pure copper films from novel iso-ureate complexescitations
- 2013Inorganic and organozinc fluorocarboxylatescitations
- 2012Photoactivated linkage isomerism in single crystals of nickel, palladium and platinum di-nitro complexes: A photocrystallographic investigationcitations
- 2011Synthesis of complexes with the polydentate ligand N,N '-bis(2-hydroxyphenyl)-pyridine-2,6-dicarboxamidecitations
- 2011Synthesis, characterization, and materials chemistry of group 4 silylimidescitations
- 2009Structural Tungsten-Imido Chemistry: The Gas-Phase Structure of W(NBut)(2)(NHBut)(2) and the Solid-State Structures of Novel Heterobimetallic W/N/M (M = Rh, Pd, Zn) Speciescitations
- 2009Synthesis and structure of aluminium amine-phenolate complexescitations
- 2001Tungsten(VI) metallacarborane imido complexes; hydrogen bonding to a bent imido ligand in {W(Nt(Bu)2[N(H)C(Me)NHtBu](C2 B9H11}
- 2000First structural characterisation of a 2,1,12-MC2B9 metallacarborane, [2,2,2-(NMe2)3-closo-2,1,12-TaC2B 9H11]. Trends in boron NMR shifts on replacing a {BH} vertex with a metal {MLn} vertex in icosahedral carboranescitations
Places of action
| Organizations | Location | People |
|---|
article
Multi-pulse atomic layer deposition of p-type SnO thin films
Abstract
<p>This work demonstrates p-type SnO thin film transistors, where the SnO active layers were deposited with atomic layer deposition (ALD) using the Sn(ii) alkoxide precursor, Sn(ii) bis(tert-butoxide). The deposition optimisation explores the use of multiple Sn pulses per ALD cycle and the use of an exposure mode (where the pump extraction is paused before the Sn precursor purge) to increase the residence time and allow for more effective saturation of the surface. The fabricated devices required post deposition annealing of the active layer, with device performance further improved by back-channel passivation using ALD Al<sub>2</sub>O<sub>3</sub>. The performance of devices deposited using the varying precursor delivery modes has also been compared, with the devices utilizing deposition with multiple Sn pulses and a post deposition anneal at 250 °C achieving an on/off ratio of ∼4 × 10<sup>4</sup> and field effect mobility (μ<sub>FE</sub>) of 0.6 cm<sup>2</sup> (V s)<sup>−1</sup>. The growth processes present during deposition with the different precursor delivery modes was investigated using fractal geometry and topographical scaling methods, with the poor device performance for the single Sn pulse deposition attributed to 2D lateral island growth.</p>