• De Wild, Jessica
• Flandre, Denis
• Brammertz, Guy
• Scaffidi, Romain
• Birant, Gizem
• Vermang, Bart

Abstract

The incorporation of Ge into kesterite thin-film absorbers for photovoltaic (PV) applications is thoroughly reviewed. Kesterite materials constitute a promising and critical raw material-free alternative to other inorganic thin-film PV compounds such as Cu(In,Ga)Se2 and CdTe. The interest in Ge alloying is to solve the critical open-circuit voltage (Voc) deficit for kesterite solar cells, which is still unresolved and under strong debate. First, the substitution of Sn with Ge from 0 to 100% in the composition of Cu2Zn(Sn1−x,Gex)(Sy,Se1−y)4 absorbers is largely discussed, with a complete overview on the existing literature. It is concluded that fine composition tuning is essential to ensure the Ge-induced enhancement of morphology and single-phase growth through a modified reaction pathway. In this regard, choosing between vacuum- and non vacuum-based deposition methods also plays a crucial role, since the former allows further up-scaling whereas the latter leads to higher thin-film quality. Second, at the solar cell level, Se-rich devices with less than 40% Ge currently exhibit the lowest Voc and fill factor deficits with the highest efficiencies beyond 13%. This is mainly due to defect and band tail compensation as well as a graded bandgap and enlarged crystalline grains. This study unveils encouraging prospects for Ge-boosted kesterite PV devices.

Topics

• Deposition
• impedance spectroscopy
• morphology
• compound
• grain
• phase
• laser emission spectroscopy
• defect