| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kangsabanik, Jiban
Technical University of Denmark
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2022Copper-incorporation for polytypism and bandgap engineering of MAPbBr 3 perovskite thin films with enhanced near-Infrared photocurrent-responsecitations
- 2022Structure modulation for bandgap engineered vacancy-ordered Cs 3 Bi 2 Br 9 perovskite structures through copper alloyingcitations
- 2022Copper-incorporation for polytypism and bandgap engineering of MAPbBr3 perovskite thin films with enhanced near-Infrared photocurrent-responsecitations
- 2022Disorder-mediated quenching of magnetization in NbVTiAl:Theory and experimentcitations
- 2022Structure modulation for bandgap engineered vacancy-ordered Cs3Bi2Br9 perovskite structures through copper alloyingcitations
- 2021Bipolar magnetic semiconducting behavior in VNbRuAlcitations
- 2021Novel Two-Dimensional MA 2 N 4 Materials for Photovoltaic and Spintronic Applicationscitations
Places of action
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article
Copper-incorporation for polytypism and bandgap engineering of MAPbBr3 perovskite thin films with enhanced near-Infrared photocurrent-response
Abstract
<p>The optoelectronic properties of lead-based halide perovskites can be enhanced through B-site engineering. Here, we studied the B-site alloying of MAPbBr<sub>3</sub> thin films with copper (Cu<sup>2+</sup>). The alloyed perovskite thin films were characterized by a dark color, enlarged average grain boundary, and lowering of the optical bandgap from 2.32 eV for pristine MAPbBr<sub>3</sub> to 1.85 eV for 50% Cu-substituted MAPbBr<sub>3</sub>. Various characterization methods revealed that the Cu-incorporation leads to the appearance of a Cu-rich secondary phase. The conductivity increased over three orders of magnitude upon alloying. Temperature-dependent conductivity measurements at temperatures ranging from 110 K to 300 K revealed the occurrence of two phase-transitions in Cu-substituted perovskite, and only one transition in pristine MAPbBr<sub>3</sub>. Photocurrent measurements of the alloyed perovskites showed that band-carrier generation occurred upon excitation in the near-infrared region. First-principles point defect calculation shows the likelihood of compensating Br vacancy formation with high Cu-substituting concentrations. Calculation of atomic orbital projected density of states (Cu<sub>Pb</sub> + v<sub>Br</sub> defect complex) revealed the presence of localized defect states within the pristine bandgap, explaining the observed sub-bandgap absorption. The results provide an insight into the alloying importance in phase-modulation and tailoring the optoelectronic properties of perovskites for a wide range of efficient optoelectronic devices.</p>