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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Liu, Jian
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (26/26 displayed)
- 2024Rear Surface Passivation for Ink-Based, Submicron CuIn(S, Se)2 Solar Cellscitations
- 2024Electrically Programmed Doping Gradients Optimize the Thermoelectric Power Factor of a Conjugated Polymercitations
- 2024Electrically Programmed Doping Gradients Optimize the Thermoelectric Power Factor of a Conjugated Polymercitations
- 2022Charge transport in doped conjugated polymers for organic thermoelectricscitations
- 2022A method for identifying the cause of inefficient salt-doping in organic semiconductorscitations
- 2022Backbone-driven host-dopant miscibility modulates molecular doping in NDI conjugated polymerscitations
- 2022Backbone-driven host-dopant miscibility modulates molecular doping in NDI conjugated polymerscitations
- 2021Amphipathic Side Chain of a Conjugated Polymer Optimizes Dopant Location toward Efficient N-Type Organic Thermoelectricscitations
- 2021Amphipathic Side Chain of a Conjugated Polymer Optimizes Dopant Location toward Efficient N-Type Organic Thermoelectricscitations
- 2021Molecular Doping Directed by a Neutral Radicalcitations
- 2021Molecular Doping Directed by a Neutral Radicalcitations
- 2021Modeling the Effect of Prestressing on the Ultimate Behavior of Deep-to-Slender Concrete Beams ; Belgium
- 2020N-type organic thermoelectrics:demonstration of ZT > 0.3citations
- 2020Electrical Conductivity of Doped Organic Semiconductors Limited by Carrier-Carrier Interactionscitations
- 2020Electrical Conductivity of Doped Organic Semiconductors Limited by Carrier-Carrier Interactionscitations
- 2020Insights into the structure−activity relationships in metal−Organic framework-supported nickel catalysts for ethylene hydrogenationcitations
- 2020N-type organic thermoelectricscitations
- 2019Two-Parameter Kinematic Approach for complete Shear Behaviour of Deep FRC Beamscitations
- 2019Structural properties of protective diamond-like-carbon thin films grown on multilayer graphenecitations
- 2018Advantages of Yolk Shell Catalysts for the DRM: A Comparison of Ni/ZnO@SiO2 vs. Ni/CeO2 and Ni/Al2O3.citations
- 2018Beyond the Active Sitecitations
- 2017N-Type Organic Thermoelectrics:Improved Power Factor by Tailoring Host-Dopant Miscibilitycitations
- 2017N-Type Organic Thermoelectricscitations
- 2016Deposition of LiF onto Films of Fullerene Derivatives Leads to Bulk Dopingcitations
- 2016Deposition of LiF onto Films of Fullerene Derivatives Leads to Bulk Dopingcitations
- 2009Enhanced infrared emission from colloidal HgTe nanocrystal quantum dots on silicon-on-insulator photonic crystalscitations
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article
A method for identifying the cause of inefficient salt-doping in organic semiconductors
Abstract
<p>Doping to enhance the electrical conductivity of organic semiconductors is not without its challenges: The efficacy of this process depends on many factors and it is not always clear how to remedy poor doping. In the case of doping with salts, one of the possible causes of poor doping is a limited yield of integer charge transfer resulting in the presence of both cations and anions in the film. The charge of such ions can severely limit the electrical conductivity, but their presence is not easily determined. Here we introduce a set of simple conductivity measurements to determine whether poor doping in the case where the dopant is a salt is due to limited integer charge transfer. By tracking how the conductivity changes over time when applying a bias voltage for an extended amount of time we can pinpoint whether unwanted ions are present in the film. Firstly, we introduce the principle of this approach by performing numerical simulations that include the movement of ions. We show that the conductivity can increase or decrease depending on the type of ions present in the film. Next, we show that the movement of these dopant ions causes a build-up of space-charge, which makes the current-voltage characteristic non-linear. Next, we illustrate how this approach may be used in practice by doping a fullerene derivative with a series of organic salts. We thus provide a tool to make the optimization of doping more rational.</p>