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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Levason, William
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (25/25 displayed)
- 2022Tungsten(VI) selenide tetrachloride, WSeCl 4 - synthesis, properties, coordination complexes and application of [WSeCl 4 (SenBu 2 )] for CVD growth of WSe 2 thin filmscitations
- 2021Mono- and di-phosphine oxide complexes of aluminium, gallium and indium with weakly coordinating triflate anions – Synthesis, structures and propertiescitations
- 2021Tungsten disulfide thin films via electrodeposition from a single source precursorcitations
- 2020Selective chemical vapor deposition approach for Sb2Te3 thin film micro-thermoelectric generatorscitations
- 2020Improved thermoelectric performance of Bi2Se3 alloyed Bi2Te3 thin films via low pressure chemical vapour depositioncitations
- 2020Improved thermoelectric performance of Bi 2 Se 3 alloyed Bi 2 Te 3 thin films via low pressure chemical vapour depositioncitations
- 2018Electrodeposition of a functional solid state memory material – germanium antimony telluride from a non-aqueous plating bathcitations
- 2016Haloplumbate salts as reagents for the non-aqueous electrodeposition of leadcitations
- 2016A versatile precursor system for supercritical fluid electrodeposition of main-group materialscitations
- 2016Nanoscale arrays of antimony telluride single crystals by selective chemical vapor depositioncitations
- 2015Chemical vapour deposition of antimony chalcogenides with positional and orientational control: precursor design and substrate selectivitycitations
- 2015Aza-macrocyclic complexes of Group 1 cations:synthesis, structures and density functional theory studycitations
- 2015Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge2Sb2Te5phase change memorycitations
- 2015A Versatile Precursor System for Supercritical Fluid Electrodeposition of Main-Group Materialscitations
- 2015Phase-change memory properties of electrodeposited Ge-Sb-Te thin filmcitations
- 2014Niobium(v) and tantalum(v) halide chalcogenoether complexes – towards single source CVD precursors for ME2thin filmscitations
- 2013Non-aqueous electrodeposition of metals and metalloids from halometallate saltscitations
- 2013Low pressure chemical vapour deposition of crystalline Ga2Te3 and Ga2Se3 thin films from single source precursors using telluroether and selenoether complexescitations
- 2013Telluroether and selenoether complexes as single source reagents for low pressure chemical vapor deposition of crystalline Ga2Te3 and Ga2Se3 thin filmscitations
- 2013Chromium(V) oxide trichloride, and some pentachlorido-oxido-chromate(V) salts: structures and spectroscopic characterizationcitations
- 2012Highly selective chemical vapor deposition of tin diselenide thin films onto patterned substrates via single source diselenoether precursorscitations
- 2011Chemical vapor deposition of GaP and GaAs thin films from [nBu2Ga(µ-EtBu2)2GanBu2] (E= P or As) and Ga(PtBu2)3citations
- 2010Synthesis and structure of [{C7F15CO2}2AgAu(PPh3)]2 and its use in electrodeposition of gold–silver alloyscitations
- 2009Spectroscopic and Vanadium K-Edge EXAFS Studies on VO2Cl and the Crystal Structure of [{Cl2VO(O2PCl2)(POCl3)}2]citations
- 2009Electrodeposition of metals from supercritical fluidscitations
Places of action
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article
Tungsten disulfide thin films via electrodeposition from a single source precursor
Abstract
We report a simple process for the electrodeposition of tungsten disulfide thin films from a CH<sub>2</sub>Cl<sub>2</sub>-based electrolyte using a tailored single source precursor, [NEt<sub>4</sub>]<sub>2</sub>[WS<sub>2</sub>Cl<sub>4</sub>]. This new precursor incorporates the 1:2 W:S ratio required for formation of WS<sub>2</sub>, and eliminates the need for an additional proton source in the electrolyte to remove excess sulfide. The electrochemical behaviour of [NEt<sub>4</sub>]<sub>2</sub>[WS<sub>2</sub>Cl<sub>4</sub>] is studied by cyclic voltammetry and electrochemical quartz crystal microbalance techniques, and the WS<sub>2</sub> thin films are grown by potentiostatic electrodeposition.