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Valle, Nathalie
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Topics
Publications (15/15 displayed)
- 2023Post‐deposition annealing and interfacial atomic layer deposition buffer layers of Sb<sub>2</sub>Se<sub>3</sub>/CdS stacks for reduced interface recombination and increased open‐circuit voltagescitations
- 2021Elucidating the growth mechanism of ZnO films by atomic layer deposition with oxygen gas <i>via</i> isotopic trackingcitations
- 2020Fully Transparent Friction‐Modulation Haptic Device Based on Piezoelectric Thin Filmcitations
- 2019Friction and wear performance of functionally graded ductile iron for brake padscitations
- 2019Evidence of Reversible Oxidation at CuInSe2 Grain Boundaries
- 2018A passivating contact for silicon solar cells formed during a single firing thermal annealingcitations
- 2017Understanding the mechanisms of Si–K–Ca glass alteration using silicon isotopescitations
- 201613.3% efficient solution deposited Cu(In,Ga)Se2 solar cells processed with different sodium salt sourcescitations
- 2016Metallurgical characterization of coupled carbon diffusion and precipitation in dissimilar steel weldscitations
- 2013Redistribution and Effect of Various Elements on the Morphology of Primary Graphite in Cast Ironcitations
- 2013Distribution of carbon in martensite during quenching and tempering of dual phase steels and consequences for damage propertiescitations
- 2012A SIMS and TEM investigation of the microstructure of wear-resistant ductile cast ironcitations
- 2012Effect of various dopant elements on primary graphite growthcitations
- 2010Elemental and isotopic (29Si and 18O) tracing of glass alteration mechanismscitations
- 2010Wear property of ductile iron locally reinforced with Cr-containing steel insertscitations
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article
Elucidating the growth mechanism of ZnO films by atomic layer deposition with oxygen gas <i>via</i> isotopic tracking
Abstract
<p>The growth process of zinc oxide (ZnO) thin films by atomic layer deposition (ALD) accompanied by the presence of oxygen gas pulsing is investigated by means of the isotopic tracking of oxygen <sup>18</sup>O from the water precursor and oxygen <sup>16</sup>O from the gas.</p>