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Napari, Mari
King's College London
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2024Forming-free and non-linear resistive switching in bilayer HfOx/TaOx memory devices by interface-induced internal resistancecitations
- 2024Spatially selective crystallization of ferroelectric Hf0.5Zr0.5O2 films induced by sub-nanosecond laser annealingcitations
- 2024Forming-free and non-linear resistive switching in bilayer HfO x /TaO x memory devices by interface-induced internal resistancecitations
- 2021Nickel oxide thin films grown by chemical deposition techniques: Potential and challenges in next‐generation rigid and flexible device applications
- 2021Atomic scale surface modification of TiO2 3D nano-arrays : plasma enhanced atomic layer deposition of NiO for photocatalysiscitations
- 2020Ti Alloyed α-Ga2O3 : route towards Wide Band Gap Engineeringcitations
- 2020Role of ALD Al2O3 surface passivation on the performance of p-type Cu2O thin film transistors
- 2020Ti alloyed $α$-Ga$_2$O$_3$: route towards wide band gap engineering
- 2020Bandgap Lowering in Mixed Alloys of Cs2Ag(SbxBi1-x)Br6 Double Perovskite Thin Films
- 2020Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineeringcitations
- 2020Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering.
- 2020Bandgap lowering in mixed alloys of Cs2Ag(SbxBi1−x)Br6 double perovskite thin filmscitations
- 2020Bandgap lowering in mixed alloys of Cs2Ag(SbxBi1−x)Br6 double perovskite thin filmscitations
- 2020Ti Alloyed α -Ga 2 O 3: Route towards Wide Band Gap Engineering
- 2017Room-temperature plasma-enhanced atomic layer deposition of ZnO : Film growth dependence on the PEALD reactor configurationcitations
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article
Bandgap lowering in mixed alloys of Cs2Ag(SbxBi1−x)Br6 double perovskite thin films
Abstract
<p>Reductions in the bandgap of Cs<sub>2</sub>AgBiBr<sub>6</sub> and Cs<sub>2</sub>AgSbBr<sub>6</sub> thin films are achieved through alloying due to non-linear mixing of Bi and Sb orbitals.</p>