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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Anuar, Afiq
Martin Luther University Halle-Wittenberg
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article
Agglomeration enhancement of AlN surface diffusion fluxes on a (0 0 0 1)-sapphire substrate grown by pulsed atomic-layer epitaxy techniques via MOCVD
Abstract
<p>An atomically flat covering with a dense and crack-free surface of aluminium nitride films was successfully deposited on a sapphire-(0 0 0 1) substrate through a pulsed atomic-layer epitaxy technique <italic>via</italic> horizontal metalorganic chemical vapour deposition.</p>