| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Misra, Shantanu
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2024Unravelling the need for balancing band convergence and resonant level in Sn 1- x - y In x Mn y Te for high thermoelectric performancecitations
- 2021Synthesis, crystal structure and transport properties of the cluster compounds Tl 2 Mo 15 S 19 and Ag 3 Tl 2 Mo 15 S 19citations
- 2021Synthesis and physical properties of single-crystalline InTe: towards high thermoelectric performancecitations
- 2021Residual resistivity as an independent indicator of resonant levels in semiconductorscitations
- 2021Enhanced thermoelectric performance of InTe through Pb dopingcitations
- 2021Enhanced thermoelectric performance of InTe through Pb dopingcitations
- 2020Band structure engineering in Sn 1.03 Te through an In-induced resonant levelcitations
- 2020Optimum in the thermoelectric efficiency of nanostructured Nb-doped TiO 2 ceramics: from polarons to Nb–Nb dimerscitations
- 2020Optimum in the thermoelectric efficiency of nanostructured Nb-doped TiO 2 ceramics: from polarons to Nb–Nb dimerscitations
- 2020Towards highly-efficient telluride-based thermoelectric materials ; Vers des matériaux thermoélectriques à haute efficacité à base de tellure
- 2019Band structure engineering in Sn 1.03 Te through an In-induced resonant levelcitations
- 2019Scalable free-standing polypyrrole films for wrist-band type flexible thermoelectric power generatorcitations
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article
Band structure engineering in Sn 1.03 Te through an In-induced resonant level
Abstract
Narrow-band-gap IV-VI semiconductors represent a historically important class of thermoelectric materials. As one of the representative compound of this class, SnTe has been reinvestigated over the last years demonstrating its potential as a high-temperature p-type thermoelectric material. Here, we present a detailed study of the influence of very low doping levels of In, from 0.05% up to 2%, on the high-temperature transport properties of the selfcompensated Sn1.03Te compound. Our results evidence a strong impact of In on the transport properties, consistent with the presence of an In-induced resonant level (RL) in the valence bands of Sn1.03Te. This peculiar behavior is confirmed by electronic band structure calculations performed using the Korringa-Kohn-Rostoker method with the coherent potential approximation (KKR-CPA) revealing a narrow and sharp peak in the density of states (DOS) induced by the hybridization of the In s-states with the electronic states of Sn1.03Te. This distortion in the DOS results in a spectacular increase in both the thermopower and electrical resistivityat300K. AlthoughtheinfluenceoftheRLis somewhat lessenedathigher temperatures, a significant enhancement in theZTvalues is nevertheless achieved with a peak ZTof 0.75 at 800 K which represents an increase of 35% over the values measured in Sn1.03Te. Of relevance for practical applications, the weak dependence of the RL on temperature leads to enhanced averageZTvalue.