693.932 PEOPLE
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Candolfi, Christophe
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (86/86 displayed)
- 2024Unravelling the need for balancing band convergence and resonant level in Sn 1- x - y In x Mn y Te for high thermoelectric performancecitations
- 2024Influence of Sn Bi Antisite Defects on the Electronic Band Structure and Transport Properties of the Layered Chalcogenide Semiconductor SnBi 2 Te 4citations
- 2024AsTe 3 : A novel crystalline semiconductor with ultralow thermal conductivity obtained by congruent crystallization from parent glasscitations
- 2024Effect on thermoelectric and mechanical properties of interstitial void filling by Cu in ZrNiSn HH alloycitations
- 2023Large-scale colloidal synthesis of chalcogenides for thermoelectric applicationscitations
- 2023Approaching the minimum lattice thermal conductivity in TiCoSb half-Heusler alloys by intensified point-defect phonon scatteringcitations
- 2023Approaching the minimum lattice thermal conductivity in TiCoSb half-Heusler alloys by intensified point-defect phonon scatteringcitations
- 2023Coupling of electronic transport and defect engineering substantially enhances the thermoelectric performance of p-type TiCoSb HH alloycitations
- 2023Realization of Band Convergence in p-Type TiCoSb Half-Heusler Alloy Significantly Enhances the Thermoelectric Performancecitations
- 2023Thermoelectric Borides: Review and Future Perspectivescitations
- 2022Influence of Thermoelectric Properties and Parasitic Effects on the Electrical Power of Thermoelectric Micro-Generatorscitations
- 2021Stress/pressure-stabilized cubic polymorph of Li 3 Sb with improved thermoelectric performancecitations
- 2021Synthesis, crystal structure and transport properties of the cluster compounds Tl 2 Mo 15 S 19 and Ag 3 Tl 2 Mo 15 S 19citations
- 2021Synthesis and physical properties of single-crystalline InTe: towards high thermoelectric performancecitations
- 2021Tl 0.6 Mo 3 S 5 , an original large tunnel-like molybdenum sulfide with Mo zigzag chains and disordered Tl cationscitations
- 2021Residual resistivity as an independent indicator of resonant levels in semiconductorscitations
- 2021Enhanced thermoelectric performance of InTe through Pb dopingcitations
- 2021Tl0.6Mo3S5, an original large tunnel-like molybdenum sulfide with Mo zigzag chains and disordered Tl cationscitations
- 2021Thermoelectric characterization of the clathrate-I solid solution Ba 8−δ Au x Ge 46−xcitations
- 2020Band structure engineering in Sn 1.03 Te through an In-induced resonant levelcitations
- 2020Optimum in the thermoelectric efficiency of nanostructured Nb-doped TiO 2 ceramics: from polarons to Nb–Nb dimerscitations
- 2020Optimum in the thermoelectric efficiency of nanostructured Nb-doped TiO 2 ceramics: from polarons to Nb–Nb dimerscitations
- 2020Influence of Nanostructuration on the Vibrational, Electronic and Optical Properties of CrSi 2 Thin Filmscitations
- 2020Influence of Nanostructuration on the Vibrational, Electronic and Optical Properties of CrSi<sub>2</sub> Thin Filmscitations
- 2020Unravelling the Beneficial Influence of Ag insertion on the Thermoelectric Properties of the Cluster Compound K 2 Mo 15 Se 19citations
- 2020Structural and transport properties of quenched and melt-spun Bi x Sb 2−x Te 3 solid solutions (x = 0.40 and 0.48)citations
- 2020Structural and transport properties of quenched and melt-spun Bi<sub>x</sub>Sb<sub>2−x</sub>Te<sub>3</sub> solid solutions (x = 0.40 and 0.48)citations
- 2019Band structure engineering in Sn 1.03 Te through an In-induced resonant levelcitations
- 2019Thermoelectric properties of the tetrahedrite–tennantite solid solutions Cu 12 Sb 4−x As x S 13 and Cu 10 Co 2 Sb 4−y As y S 13 (0 ≤ x, y ≤ 4)citations
- 2019Electronic Band Structure and Transport Properties of the Cluster Compound Ag3Tl2Mo15Se19citations
- 2019Electronic Band Structure and Transport Properties of the Cluster Compound Ag3Tl2Mo15Se19citations
- 2019Comprehensive study of the low-temperature transport properties of polycrystalline Sn1+xTe (x=0 and 0.03)citations
- 2019Thermoelectric properties of the tetrahedrite–tennantite solid solutions Cu 12 Sb 4−x As x S 13 and Cu 10 Co 2 Sb 4−y As y S 13 (0 ≤ x , y ≤ 4)citations
- 2019Electronic Band Structure and Transport Properties of the Cluster Compound Ag 3 Tl 2 Mo 15 Se 19citations
- 2018Influence of S and Te substitutions on the thermoelectric properties of the cluster compound Ag 3.8 Mo 9 Se 11citations
- 2018An Sn-induced resonant level in β-As 2 Te 3citations
- 2018Improved ZT in ball‐milled and spark plasma sintered Cu 15 As 30 Te 55 glass ceramicscitations
- 2018Stabilization of Metastable Thermoelectric Crystalline Phases by Tuning the Glass Composition in the Cu–As–Te Systemcitations
- 2018Stabilization of Metastable Thermoelectric Crystalline Phases by Tuning the Glass Composition in the Cu–As–Te Systemcitations
- 2018Crystal Structure and Transport Properties of the Homologous Compounds (PbSe) 5 (Bi 2 Se 3 ) 3 m ( m = 2, 3)citations
- 2017Thermoelectric properties and stability of glasses in the Cu-As-Te systemcitations
- 2017Thermoelectric properties and stability of glasses in the Cu-As-Te systemcitations
- 2017Structural and Electrical Properties Characterization of Sb 1.52 Bi 0.48 Te 3.0 Melt-Spun Ribbonscitations
- 2017Synthesis, Crystal Structure, and Transport Properties of the Hexagonal Mo9 Cluster Compound Ag3RbMo9Se11citations
- 2017Structural and Electrical Properties Characterization of Sb1.52Bi0.48Te3.0 Melt-Spun Ribbonscitations
- 2017Structural and Electrical Properties Characterization of Sb1.52Bi0.48Te3.0 Melt-Spun Ribbonscitations
- 2017Improved Thermoelectric Properties in Melt-Spun SnTecitations
- 2017Effect of Isovalent Substitution on the Electronic Structure and Thermoelectric Properties of the Solid Solution α‑As2Te3−xSex (0 ≤ x ≤ 1.5) citations
- 2017Effect of Isovalent Substitution on the Electronic Structure and Thermoelectric Properties of the Solid Solution α‑As2Te3−xSex (0 ≤ x ≤ 1.5)citations
- 2017Effect of Isovalent Substitution on the Electronic Structure and Thermoelectric Properties of the Solid Solution α‑As 2 Te 3−x Se x (0 ≤ x ≤ 1.5)citations
- 2017Stabilization of Metastable Thermoelectric Crystalline Phases by Tuning the Glass Composition in the Cu–As–Te Systemcitations
- 2017High Temperature Transport Properties of Colusite Cu 24 T 2 V 2 Ge 6 S 32 ( T = Ni, Co)citations
- 2017HPHT synthesis of highly doped InxCo4Sb12 – Experimental and theoretical studycitations
- 2016Synthesis, crystal structure and high-temperature transport properties of the new cluster compound Rb2Mo15Se19citations
- 2016Cu Insertion Into the Mo 12 Cluster Compound Cs 2 Mo 12 Se 14 : Synthesis, Crystal and Electronic Structures, and Physical Propertiescitations
- 2016Low-Temperature Transport Properties of Bi-Substituted b-As2Te3 Compoundscitations
- 2016Electronic structure, low-temperature transport and thermodynamic properties of polymorphic b-As2Te3citations
- 2016Low-Temperature Transport Properties of Bi-Substituted β-As 2 Te 3 Compoundscitations
- 2016Electronic structure, low-temperature transport and thermodynamic properties of polymorphic β-As 2 Te 3citations
- 2016Cu Insertion Into the Mo12 Cluster Compound Cs2Mo12Se14: Synthesis, Crystal and Electronic Structures, and Physical Propertiescitations
- 2016Cu Insertion Into the Mo12 Cluster Compound Cs2Mo12Se14: Synthesis, Crystal and Electronic Structures, and Physical Propertiescitations
- 2016Synthesis, crystal structure and high-temperature transport properties of the new cluster compound Rb 2 Mo 15 Se 19citations
- 2016Electrical, Thermal, and Magnetic Characterization of Natural Tetrahedrites–Tennantites of Different Origin.citations
- 2015Crystal structure, electronic band structure and high-temperature thermoelectric properties of Te-substituted tetrahedrites Cu 12 Sb 4-x Te x S 13 (0.5 <= x <= 2.0)citations
- 2015Effective medium theory based modeling of the thermoelectric properties of composites: comparison between predictions and experiments in the glass-crystal composite system Si10As15Te75–Bi0.4Sb1.6Te3citations
- 2015A round Robin test of the uncertainty on the measurements o the thermoelectric dimensionless figure of merite of Co0.87Ni0.03Sb3citations
- 2015Crystal structure, electronic band structure and high-temperature thermoelectric properties of Te-substituted tetrahedrites Cu12Sb4-xTexS13 (0.5 <= x <= 2.0)citations
- 2015Effective medium theory based modeling of the thermoelectric properties of composites: comparison between predictions and experiments in the glass-crystal composite system Si 10 As 15 Te 75 –Bi 0.4 Sb 1.6 Te 3citations
- 2014X‑ray Characterization, Electronic Band Structure, and Thermoelectric Properties of the Cluster Compound Ag2Tl2Mo9Se11citations
- 2014Assessment of the thermoelectric performance of polycrystalline p-type SnSecitations
- 2014Thermoelectric properties of In0.2Co4Sb12 skutterudites with embedded PbTe or ZnO nanoparticlescitations
- 2013Electronic band structure, magnetic, transport and thermodynamic properties of In-filled skutterudites In x Co 4 Sb 12citations
- 2013A comprehensive study of the crystallization of Cu-As-Te glasses: microstructure and thermoelectric propertiescitations
- 2013Electronic band structure, magnetic, transport and thermodynamic properties of In-filled skutterudites InxCo4Sb12citations
- 2013Electronic band structure, magnetic, transport and thermodynamic properties of In-filled skutterudites InxCo4Sb12citations
- 2013High temperature thermoelectric properties of CoSb3 skutterudites with PbTe inclusionscitations
- 2013Thermal stability and thermoelectric properties of Cu x As 40−x Te 60−y Se y semiconducting glassescitations
- 2012Synthesis, Crystal and Electronic Structures and Thermoelectrical Properties of the Novel Cluster Compound Ag3In2Mo15Se19citations
- 2012Synthesis, Crystal and Electronic Structures and Thermoelectrical Properties of the Novel Cluster Compound Ag3In2Mo15Se19citations
- 2012Synthesis, Crystal and Electronic Structures and Thermoelectric Properties of the Novel Cluster Compound Ag 3 In 2 Mo 15 Se 19citations
- 2012Synthesis, Crystal Structure, and Physical Properties of the Type-I Clathrate Ba 8−δ Ni x □ y Si 46–x–ycitations
- 2010Crystal structure and transport properties of Ba 8 Ge 43 □ 3citations
- 2010Transport and magnetic properties of Mo 2.5 Ru 0.5 Sb 7−x Te xcitations
- 2010High thermoelectric power factor in Fe-substituted Mo 3 Sb 7citations
- 2010ChemInform Abstract: BaGe5: A New Type of Intermetallic Clathrate.
- 2009Neutron Diffraction, Electronic Band Structure, and Electrical Resistivity of Mo 3−x Ru x Sb 7citations
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article
Band structure engineering in Sn 1.03 Te through an In-induced resonant level
Abstract
Narrow-band-gap IV-VI semiconductors represent a historically important class of thermoelectric materials. As one of the representative compound of this class, SnTe has been reinvestigated over the last years demonstrating its potential as a high-temperature p-type thermoelectric material. Here, we present a detailed study of the influence of very low doping levels of In, from 0.05% up to 2%, on the high-temperature transport properties of the selfcompensated Sn1.03Te compound. Our results evidence a strong impact of In on the transport properties, consistent with the presence of an In-induced resonant level (RL) in the valence bands of Sn1.03Te. This peculiar behavior is confirmed by electronic band structure calculations performed using the Korringa-Kohn-Rostoker method with the coherent potential approximation (KKR-CPA) revealing a narrow and sharp peak in the density of states (DOS) induced by the hybridization of the In s-states with the electronic states of Sn1.03Te. This distortion in the DOS results in a spectacular increase in both the thermopower and electrical resistivityat300K. AlthoughtheinfluenceoftheRLis somewhat lessenedathigher temperatures, a significant enhancement in theZTvalues is nevertheless achieved with a peak ZTof 0.75 at 800 K which represents an increase of 35% over the values measured in Sn1.03Te. Of relevance for practical applications, the weak dependence of the RL on temperature leads to enhanced averageZTvalue.