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Hillhouse, Hugh W.
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article
On understanding bandgap bowing and optoelectronic quality in Pb-Sn alloy hybrid perovskites
Abstract
High quality small-bandgap hybrid perovskites (AMX<sub>3</sub> with M = Pb<sub>1-<i>x</i></sub>Sn<sub><i>x</i></sub>) are pivotal for all-perovskite multi-junction photovoltaics. The bandgap of these alloys significantly deviates from the linear interpolation between the bandgaps of APbI<sub>3</sub> and ASnI<sub>3</sub> for all A-site cations examined thus far. This non-linearity of the bandgap with composition is referred to as bandgap bowing. Here, we explore a wide-range of A-site compositions to understand bandgap bowing and identify the optimal Pb-Sn alloy composition. Optical and structural investigations of different APb<sub>1-<i>x</i></sub>Sn<sub><i>x</i></sub>I<sub>3</sub> alloys reveal that the bandgap bowing is correlated with the extent of microstrain in their respective APbI<sub>3</sub> compounds. We discover that bandgap bowing in APb<sub>1-<i>x</i></sub>Sn<sub><i>x</i></sub>I<sub>3</sub> alloys is primarily due to local structural relaxation effects (changes in bond angles and lengths) that result from the size, shape, and charge distribution of the cations on the A-site, and that these effects are intimately coupled with chemical effects (intermixing of atomic orbitals) that result from changes in the M-site. The choice of X-site also impacts bandgap bowing because of the X-site anions' influence on local structural relaxation and chemical effects. Further, we extend these results to provide a general rationale for the origin and modulation of bandgap bowing in HP alloys. Subsequently, using high-throughput combinational spray coating and photoluminescence analysis, we find that ternary combinations of methylammonium (MA), formamidinium (FA), and cesium (Cs) are beneficial to improve the optoelectronic quality of APb<sub>1-<i>x</i></sub>Sn<sub><i>x</i></sub>I<sub>3</sub> alloys. The optimal composition, (MA<sub>0.24</sub>FA<sub>0.61</sub>Cs<sub>0.15</sub>)(Pb<sub>0.35</sub>Sn<sub>0.65</sub>I<sub>3</sub>)I<sub>3</sub> has a desirable low bandgap (1.23 eV) and high optoelectronic quality (achieving 86% of the detailed balance limit quasi-Fermi level splitting). This study provides valuable insights regarding bandgap evolution in HP alloys and the optimal small-bandgap absorber composition desired for next-generation HP tandems.