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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Alanazi, Abdulaziz
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (4/4 displayed)
- 2021Structural investigations of α-MnS nanocrystals and thin films synthesised from manganese(II) xanthates by hot injection, solvent-less thermolysis and doctor blade routes.citations
- 2020Heterometallic 3d-4f complexes as air-stable molecular pre-cursors in low temperature syntheses of stoichiometric rare-earth orthoferrite powderscitations
- 2019A molecular precursor route to quaternary chalcogenide CFTS (Cu2FeSnS4) powders as potential solar absorber materialscitations
- 2016Characterisation of an isotropic neutron source: a comparison of conventional neutron detectors and micro-silica glass bead thermoluminescent detectorscitations
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article
A molecular precursor route to quaternary chalcogenide CFTS (Cu2FeSnS4) powders as potential solar absorber materials
Abstract
In the present work we report on the synthesis of tetragonal phase of stannite Cu2FeSnS4 powder from Sn(II)and Sn(IV) using a solvent free melt method using a mixture of Cu, Fe, Sn(II) / Sn(IV) O-ethylxanthates and annealed at different temperatures. The as-synthesized powders were characterized by powder X-ray diffraction (p-XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), UV-Vis absorption spectroscopy, scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) spectroscopy, which confirm the succesful synthesis of stannite CFTS. Optical measurements shows that Cu2FeSnS4 powders have visible light absorption onsets in the far red with direct band gap energies in the range 1.32 eV - 1.39 eV which are suitable for acting as efficient absorber layers in solar cells. Electronic characterisation of these materials deposited as thin films by spin coating show that they are p type semiconductors with respectable carrier mobilities of ca. 60 cm2 V-1 s-1 with carrier densities in the order of 1014 cm-1.