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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sánchez, Yudania
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2023Stability of Cu2ZnSnSe4/CdS heterojunction based solar cells under soft post-deposition thermal treatmentscitations
- 2022A new approach for alkali incorporation in Cu2ZnSnS4 solar cells
- 2021The effect of annealing temperature on Cu<sub>2</sub>ZnGeSe<sub>4</sub> thin films and solar cells grown on transparent substratescitations
- 2021The effect of annealing temperature on Cu2ZnGeSe4 thin films and solar cells grown on transparent substratescitations
- 2019Enhanced hetero‐junction quality and performance of kesterite solar cells by aluminum hydroxide nanolayers and efficiency limitation revealed by atomic‐resolution scanning transmission electron microscopycitations
- 2019Evaluation of AA-CVD deposited phase pure polymorphs of SnS for thin films solar cellscitations
Places of action
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article
Evaluation of AA-CVD deposited phase pure polymorphs of SnS for thin films solar cells
Abstract
<p>Six different thin film solar cells consisting of either orthorhombic (α-SnS) or cubic (π-SnS) tin(ii) sulfide absorber layers have been fabricated, characterized and evaluated. Absorber layers of either π-SnS or α-SnS were selectively deposited by temperature controlled Aerosol Assisted Chemical Vapor Deposition (AA-CVD) from a single source precursor. α-SnS and π-SnS layers were grown on molybdenum (Mo), Fluorine-doped Tin Oxide (FTO), and FTO coated with a thin amorphous-TiO<sub>x</sub>layer (am-TiO<sub>x</sub>-FTO), which were shown to have significant impact on the growth rate and morphology of the as deposited thin films. Phase pure α-SnS and π-SnS thin films were characterized by X-ray diffraction analysis (XRD) and Raman spectroscopy (514.5 nm). Furthermore, a series of PV devices with an active area of 0.1 cm<sup>2</sup>were subsequently fabricated using a CdS buffer layer, intrinsic ZnO (i-ZnO) as an insulator and Indium Tin Oxide (ITO) as a top contact. The highest solar conversion efficiency for the devices consisting of the α-SnS polymorph was achieved with Mo (η = 0.82%) or FTO (η = 0.88%) as the back contacts, with respective open-circuit voltages (V<sub>oc</sub>) of 0.135 and 0.144 V, and short-circuit current densities (J<sub>sc</sub>) of 12.96 and 12.78 mA cm<sup>-2</sup>. For the devices containing the π-SnS polymorph, the highest efficiencies were obtained with the am-TiO<sub>x</sub>-FTO (η = 0.41%) back contact, with a V<sub>oc</sub>of 0.135 V, and J<sub>sc</sub>of 5.40 mA cm<sup>-2</sup>. We show that mild post-fabrication hot plate annealing can improve the J<sub>sc</sub>, but can in most cases compromise the V<sub>oc</sub>. The effect of sequential annealing was monitored by solar conversion efficiency and external quantum efficiency (EQE) measurements.</p>