| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Lamers, Marlene
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (3/3 displayed)
- 2020Influence of post-deposition annealing on the photoelectrochemical performance of CuBi2O4 thin filmscitations
- 2018Formation and suppression of defects during heat treatment of BiVO4 photoanodes for solar water splittingcitations
- 2017Enhancing Charge Carrier Lifetime in Metal Oxide Photoelectrodes through Mild Hydrogen Treatmentcitations
Places of action
| Organizations | Location | People |
|---|
article
Formation and suppression of defects during heat treatment of BiVO4 photoanodes for solar water splitting
Abstract
Metal oxide photoelectrodes typically suffer from poor carrier transport properties and extensive carrier recombination, which is caused by the presence of intrinsic or extrinsic defects in the material. Here, the influence of annealing temperature and atmosphere on the formation and suppression of defects in BiVO<sub>4</sub> - one of the best performing metal oxide photoanodes - is elucidated. Annealing in argon has little or no effect on the photoelectrochemical performance due to the competing effects of an increase in grain size (i.e., reduction of grain boundaries) and the unfavorable formation of oxygen vacancies. When annealing in air, the formation of oxygen vacancies is suppressed, resulting in up to ∼1.5-fold enhancement of the photocurrent and an order of magnitude increase of the charge carrier mobility. However, vanadium leaves the BiVO<sub>4</sub> lattice above 500 °C, which leads to a decrease in carrier lifetime and photocurrent. This vanadium loss can be avoided by supplying excess vanadium in the gas phase during annealing. This leads to enhanced charge carrier mobility and lifetime, resulting in improved photocurrents. Overall, this strategy offers a general approach to prevent unfavorable changes of cation stoichiometry during higherature treatment of complex metal oxide photoelectrodes. © 2018 The Royal Society of Chemistry.