| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Nayan, Nafarizal
Laboratoire Bourguignon des Matériaux et Procédés
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (24/24 displayed)
- 2023Analysis of the Anticorrosion Performance and Antibacterial Efficacy of Ti-Based Ceramic Coatings for Biomedical Applicationscitations
- 2021Synthesis, characterization and biophysical evaluation of the 2D Ti2CTx MXene using 3D spheroid-type culturescitations
- 2019Effects of Laser Radiation on the Optical and Electrical Properties of ITO Thin Films Deposited by RF Sputteringcitations
- 2019Photochemical reduction of carbonyl group of polyimide by 450 nm diode laser
- 2018Reduced graphene oxide-multiwalled carbon nanotubes hybrid film with low Pt loading as counter electrode for improved photovoltaic performance of dye-sensitised solar cellscitations
- 2018Difference in structural and chemical properties of sol–gel spin coated Al doped TiO2, Y doped TiO2 and Gd doped TiO2 based on trivalent dopantscitations
- 2017The influence of N2 flow rate on Ar and Ti Emission in high-pressure magnetron sputtering system plasmacitations
- 2016Sputter Deposition of Cuprous and Cupric Oxide Thin Films Monitored by Optical Emission Spectroscopy for Gas Sensing Applicationscitations
- 2016Correlation between Microstructure of Copper Oxide Thin Films and its Gas Sensing Performance at Room Temperaturecitations
- 2015Spectroscopic Studies of Magnetron Sputtering Plasma Discharge in Cu/O2/Ar Mixture for Copper Oxide Thin Film Fabricationcitations
- 2015Fabrication of inverted bulk heterojunction organic solar cells based on conjugated P3HT:PCBM using various thicknesses of ZnO buffer layercitations
- 2015Influence of TiO2 thin film annealing temperature on electrical properties synthesized by CVD technique
- 2014Glass etching for cost-effective microchannels fabricationcitations
- 2014Physical and optical studies on ZnO films by SOL-GELcitations
- 2014Fabrication and Characterisation of the Electrical and Physical Properties of the Mask Printed Graphite Paste Electrodes on Paper Substratescitations
- 2013Oxide semiconductors for solar to chemical energy conversion: nanotechnology approachcitations
- 2013Biophysical characteristics of cells cultured on cholesteryl ester liquid crystals.citations
- 2013Morphology, topography and thickness of copper oxide thin films deposited using magnetron sputtering techniquecitations
- 2012Characterization of TiAlBN nanocomposite coating deposited via radio frequency magnetron sputtering using single hot-pressed targetcitations
- 2012Plasma properties of RF magnetron sputtering system using Zn targetcitations
- 2012Sol-gel Synthesis of TiO 2 Thin Films from In-house Nano-TiO 2 Powder
- 2012Corrosion Behavior of AZ91 Mg-Alloy Coated with AlN and TiN in NaCl and Hank's Solutioncitations
- 2010Structural and Electrical Properties of TiO2 Thin Film Derived from Sol-gel Method using Titanium (IV) Butoxide
- 2010Optimization of RF magnetron sputtering plasma using Zn targetcitations
Places of action
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article
Difference in structural and chemical properties of sol–gel spin coated Al doped TiO2, Y doped TiO2 and Gd doped TiO2 based on trivalent dopants
Abstract
In this research, pure titanium dioxide (TiO2) and doped TiO2 thin film layers were prepared using the spin coating method of titanium(IV) butoxide on a glass substrate from the sol–gel method and annealed at 500 °C. The effects on the structural and chemical properties of these thin films were then investigated. The metal doped TiO2 thin film which exists as trivalent electrons consists of aluminium (Al), yttrium (Y) and gadolinium (Gd). The anatase phase of the thin films was observed and it was found that the crystal size became smaller when the concentration of thin film increased. The grain size was found to be 0.487 to 13.925 nm. The types of surface morphologies of the thin films were nanoporous, with a little agglomeration and smaller nanoparticles corresponding to Al doped TiO2, Y doped TiO2 and Gd doped TiO2, respectively. The trivalent doping concentration of the thin films increased with a rising of thickness of the thin film. This can contribute to the defects that give advantages to the thin film when the mobility of the hole carriers is high and the electrons of Ti can move easily. Thus, Ti3+ existed as a defect state in the metal doped TiO2 thin film based on lattice distortion with a faster growth thin film that encouraged the formation of a higher level of oxygen vacancy defects.