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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Varagnolo, Silvia
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Topics
Publications (9/9 displayed)
- 2024Condensation Coefficient Modulation: An Unconventional Approach to the Fabrication of Transparent and Patterned Silver Electrodes for Photovoltaics and Beyondcitations
- 2020Embedded-grid silver transparent electrodes fabricated by selective metal condensation
- 2019Stabilizing Silver Window Electrodes for Organic Photovoltaics Using a Mercaptosilane Monolayer
- 2018Elucidating the Exceptional Passivation Effect of 0.8 nm Evaporated Aluminium on Transparent Copper Filmscitations
- 2018Elucidating the Exceptional Passivation Effect of 0.8 nm Evaporated Aluminium on Transparent Copper Films
- 2018Fabrication of copper window electrodes with ~10⁸ apertures cm⁻² for organic photovoltaicscitations
- 2018Cs1−xRbxSnI3 light harvesting semiconductors for perovskite photovoltaicscitations
- 2018Cs 1-: X Rb x SnI 3 light harvesting semiconductors for perovskite photovoltaicscitations
- 2016Effect of hair morphology and elastic stiffness on the wetting properties of hairy surfaces
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article
Cs1−xRbxSnI3 light harvesting semiconductors for perovskite photovoltaics
Abstract
We show that films of the 3-dimensional perovskite Cs1−xRbxSnI3 can be prepared from room temperature N,N-dimethylformamide solutions of RbI, CsI and SnCl2 for x ≤ 0.5, and that for x ≤ 0.2 film stability is sufficient for utility as the light harvesting layer in inverted photovoltaic (PV) devices. Electronic absorption and photoluminescence spectroscopy measurements supported by computational simulation, show that increasing x increases the band gap, due to distortion of the lattice of SnI6 octahedra that occurs when Cs is substituted with Rb, although it also reduces the stability towards decomposition. When Cs0.8Rb0.2SnI3 perovskite is incorporated into the model inverted PV device structure; ITO|perovskite|C60|bathocuproine|Al, an ∼120 mV increase in open-circuit is achieved which is shown to correlate with an increase in perovskite ionisation potential. However, for this low Rb loading the increase in band gap is very small (∼30 meV) and so a significant increase in open circuit-voltage is achieved without reducing the range of wavelengths over which the perovskite can harvest light. The experimental findings presented are shown to agree well with the predictions of density functional theory (DFT) simulations of the stability and electronic structure, also performed as part of this study.