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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Walker, David
University of Warwick
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2024Untangling free carrier and exciton dynamics in layered hybrid perovskites using ultrafast optical and terahertz spectroscopycitations
- 2023Untangling free carrier and exciton dynamics in layered hybrid perovskites using ultrafast optical and terahertz spectroscopycitations
- 2023Operando X-ray and Post-mortem Investigations of Electrochemical Degradation in Single-crystalline LiNi0.8Mn0.1Co0.1O2–Graphite pouch cellscitations
- 2023Tetragonal Kondo Insulator EuCd2Sb2 Discovered via High Pressure High Temperature Synthesiscitations
- 2023Quantifying electrochemical degradation in single-crystalline LiNi0.8Mn0.1Co0.1O2–graphite pouch cells through operando X-ray and post-mortem investigations
- 2023Data for Influence of co-reactants on surface passivation by nanoscale hafnium oxide layers grown by atomic layer deposition on siliconcitations
- 2023Hafnium oxide : a thin film dielectric with controllable etch resistance for semiconductor device fabricationcitations
- 2020Ambient and high pressure CuNiSb₂citations
- 2019Advanced steam measurement techniques: a study of how electrical capacitance measurements are affected by the spatial positioning of water within wet steam
- 2018MnFe0.5Ru0.5O3: An Above-Room-Temperature Antiferromagnetic Semiconductorcitations
- 2018Synthesizing bijective lensescitations
- 2018Cs1−xRbxSnI3 light harvesting semiconductors for perovskite photovoltaicscitations
- 2018Cs 1-: X Rb x SnI 3 light harvesting semiconductors for perovskite photovoltaicscitations
- 2015Thermal, compositional, and compressional demagnetization of cementitecitations
- 2015Structural, optical and vibrational properties of self-assembled Pbn+1(Ti1−xFex)nO3n+1−δ Ruddlesden-Popper superstructurescitations
- 2013Thin film LaYbO3 capacitive structures grown by pulsed laser depositioncitations
- 2001Synthesis and thermal decomposition of tetragonal RbClO4 and volume of fluid O2 from 2 to 9 GPacitations
Places of action
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article
Cs1−xRbxSnI3 light harvesting semiconductors for perovskite photovoltaics
Abstract
We show that films of the 3-dimensional perovskite Cs1−xRbxSnI3 can be prepared from room temperature N,N-dimethylformamide solutions of RbI, CsI and SnCl2 for x ≤ 0.5, and that for x ≤ 0.2 film stability is sufficient for utility as the light harvesting layer in inverted photovoltaic (PV) devices. Electronic absorption and photoluminescence spectroscopy measurements supported by computational simulation, show that increasing x increases the band gap, due to distortion of the lattice of SnI6 octahedra that occurs when Cs is substituted with Rb, although it also reduces the stability towards decomposition. When Cs0.8Rb0.2SnI3 perovskite is incorporated into the model inverted PV device structure; ITO|perovskite|C60|bathocuproine|Al, an ∼120 mV increase in open-circuit is achieved which is shown to correlate with an increase in perovskite ionisation potential. However, for this low Rb loading the increase in band gap is very small (∼30 meV) and so a significant increase in open circuit-voltage is achieved without reducing the range of wavelengths over which the perovskite can harvest light. The experimental findings presented are shown to agree well with the predictions of density functional theory (DFT) simulations of the stability and electronic structure, also performed as part of this study.