• Pousaneh, Elaheh
• Weber, Marcus
• Zahn, Dietrich R. T.
• Schulz, Stefan. E.
• Mehring, Michael
• Noll, Julian
• Dzhagan, Volodymyr
• Lang, Heinrich

Abstract

<p>The synthesis of ketoiminato copper(II) complexes [Cu(OCRCHC(CH3)NCH2CH2X)(mu-OAc)](2) (X = NMe2: 4a, R = Me; 4b, R = Ph. X = OMe: 5, R = Me) and [Cu(OCRCHCMeNCH2CH2NEt2)(OAc)] (6, R = Me) from RC(O)CHC(CH3)N(H)CH2CH2X (X = NMe2: 1a, R = Me; 1b, R = Ph. X = NEt2: 1c, R = Me. X = OMe: 2, R = Me) and [Cu(OAc)(2)center dot H2O] (3) is reported. The molecular solid-state structures of 4-6 were determined by single crystal X-ray diffraction studies, showing that 4a, b and 5 are dimers which are set up by two [{Cu(mu-OAc)L}] (L = ketoiminato ligand) units featuring a square-planar Cu2O2 core with a distorted square-pyramidal geometry at Cu(II). In contrast, 6 is monomeric with a tridentate-coordinated OCMeCHCMeNCH2CH2NEt2 ligand and a s-bonded acetate group, thus inducing a square-planar environment around Cu(II). The thermal behavior of all complexes was studied by TG (Thermogravimetry) and DSC (Differential Scanning Calorimetry) under an atmosphere of Ar and O-2. Complex 4b shows the highest first onset temperature at 213 degrees C (under O-2) and 239 degrees C (Ar). PXRD studies confirmed the formation of CuO under an atmosphere of O-2 and Cu/Cu2O under Ar. TG-MS studies, exemplarily carried out with 4a, indicate the elimination of the ketoiminato ligands with detectable fragments such as m/z = 15, 28, 43, 44, 45, and 60 at a temperature above 250 degrees C. Vapor pressure measurements displayed that 5 shows the highest volatility of 3.6 mbar at 70 degrees C (for comparison, 4a, 1.4; 4b, 1.3; 6, 0.4 mbar) and hence 4a and 5 were used as MOCVD precursors for Cu/Cu2O deposition on Si/SiO2 at substrate temperatures of 450 degrees C and 510 degrees C. The deposition experiments were carried out under an atmosphere of nitrogen as well as oxygen. The as-obtained layers were characterized by SEM, EDX, XPS, and PXRD, showing that with oxygen as the reactive gas a mixture of metallic copper and copper(I) oxide without carbon impurities was formed, while under N-2 Cu films with 53-68 mol% C contamination were produced. In a deposition experiment using precursor 5 at 510 degrees C under N-2 a pure copper film was obtained.</p>

Topics

• impedance spectroscopy
• single crystal X-ray diffraction
• single crystal
• Carbon
• scanning electron microscopy
• experiment
• x-ray photoelectron spectroscopy
• Oxygen
• reactive
• Nitrogen
• mass spectrometry
• copper
• thermogravimetry
• differential scanning calorimetry
• Energy-dispersive X-ray spectroscopy
• chemical vapor deposition