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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Slaoui, Abdelilah
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2024Influence of Sodium Concentration on the Optoelectronic Properties of Silicon Clathrate Filmscitations
- 2023Tunability of silicon clathrate film properties by controlled guest-occupation of their cagescitations
- 2023Insights on CaTiS3 films grown by pulsed laser depositioncitations
- 2023Moderate temperature deposition of RF magnetron sputtered SnO2-based electron transporting layer for triple cation perovskite solar cellscitations
- 2022Nano-composite MOx materials for NVMscitations
- 2022Study of wide bandgap SnOx thin films grown by a reactive magnetron sputtering via a two-step methodcitations
- 2022Insights into Cu2O Thin Film Absorber via Pulsed Laser Depositioncitations
- 2020Growth and Characterization of (Tb,Yb) Co-Doping Sprayed ZnO Thin Filmscitations
- 2020Yb-doped zinc tin oxide thin film and its application to Cu(InGa)Se2 solar cellscitations
- 2019Cu(InGa)Se 2 Solar Cell Efficiency Enhancement Using a Yb-Doped SnO x Photon Converting Layercitations
- 2019EFFECT OF POTASSIUM CYANIDE ETCHING ON STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF Cu2ZnSnS4 THIN FILMS DEPOSITED BY A MODIFIED SPRAY PROCESScitations
- 2018Tuning photovoltaic response in Bi 2 FeCrO 6 films by ferroelectric polingcitations
- 2017Tuning the chemical properties of europium complexes as downshifting agents for copper indium gallium selenide solar cellscitations
- 2017EuIII‐Based Nanolayers as Highly Efficient Downshifters for CIGS Solar Cellscitations
- 2017Polycrystalline silicon films obtained by crystallization of amorphous silicon on aluminium based substrates for photovoltaic applicationscitations
- 2011Effect of annealing treatments on photoluminescence and charge storage mechanism in silicon-rich SiNx:H films
- 2011Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2stack tunnel dielectrics for memory application
- 2010Ultra-Low Energy Ion Implantation of Si into HfO2 and HfSiO-based Structures for Non Volatile Memory Applications
Places of action
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article
Tuning the chemical properties of europium complexes as downshifting agents for copper indium gallium selenide solar cells
Abstract
International audience; New europium(III) β-diketonate based complexes with the general formula [Eu(β-Dik)3(NL)x], where β-Dik = 2-thenoyltrifluoroacetonate, 4,4,4-trifluoro-1-phenyl-1,3-butanedione, 4,4,4-trifluoro-1-(2-naphthyl)-1,3-butanedione, NL = diphenyl sulfoxide (x = 2), bis[2-(diphenylphosphino)phenyl] ether oxide (x = 1), triphenylphosphine oxide (x = 2), 5,6-epoxy-5,6-dihydro-[1,10]phenanthroline (x = 1), are designed and synthesized. The coordination complexes are comprehensively characterized by elemental analysis, infrared and 1 H, 13 C, 19 F NMR spectroscopy. The complexes are embedded into poly(ethylene-co-vinyl acetate) (EVA), poly(methyl methacrylate) (PMMA) or poly(vinyl butyral-co-vinyl alcohol-co-vinyl acetate) (PVB) matrices. Photoluminescence behavior is investigated in detail and exhibits the characteristic 5 D0→ 7 F0-4 emission bands with quantum yields of 55-83 % in the solid state and 34-86 % in the polymers. Encapsulation of CIGS solar cells with luminescent downshifting (LDS) layer results in an important improvement of external quantum efficiency (EQE) in the UV region, from 14 % and up to 58 % at 360 nm for the best compound. The short circuit current density (Jsc) in the range of 300-400 nm increases up to 0.77 mA/cm 2 for the best LDS which corresponds to 71 % of the Jsc enhancement of an ideal downshifter. I-V measurements follow the spectral response data with an absolute increase in conversion efficiency of up to 0.8 %.