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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Chong, Harold
University of Southampton
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2020Laser-driven phase segregation and tailoring of compositionally graded microstructures in Si-Ge nanoscale thin filmscitations
- 2020Laser processed semiconductors for integrated photonic devices
- 2020Laser-written silicon-germanium alloy microstructures with tunable compositionally graded profiles
- 2020Multi-stack insulator to minimise threshold voltage drift in ZnO FET sensors operating in ionic solutionscitations
- 2019Laser processing of amorphous semiconductors on planar substrates for photonic and optoelectronic applications
- 2017Laser annealing of low temperature deposited silicon waveguidescitations
- 2016Large-scale nanoelectromechanical switches based on directly deposited nanocrystalline graphene on insulating substratescitations
- 2015Characterisation of nanographite for MEMS resonators
- 2015A silicon/lithium niobate hybrid photonic material platform produced by laser processing
- 2012Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applicationscitations
Places of action
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article
Large-scale nanoelectromechanical switches based on directly deposited nanocrystalline graphene on insulating substrates
Abstract
The direct growth of graphene on insulating substrate is highly desirable for the commercial scale integration of graphene due to the potential lower cost and better process control. We report a simple, direct deposition of nanocrystalline graphene (NCG) on insulating substrates via catalyst-free plasma-enhanced chemical vapor deposition at relatively low temperature of ~800 °C. The parametric study of the process conditions that we conducted reveals the deposition mechanism and allows us to grow high quality films. Based on such film, we demonstrate the fabrication of a large-scale array of nanoelectromechanical (NEM) switches using regular thin film process techniques, with no transfer required. Thanks to ultra-low thickness, good uniformity, and high Young's modulus of ~0.86 TPa, NCG is considered as a promising material for high performance NEM devices. The high performance is highlighted for the NCG switches, e.g. low pull-in voltage <3 V, reversible operations, minimal leakage current of ~1 pA, and high on/off ratio of ~10 5 .