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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Souza, Roger A. De
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Publications (5/5 displayed)
- 2024A Single Model for the Thermodynamics and Kinetics of Metal Exsolution from Perovskite Oxidescitations
- 2022The impact of Mn nonstoichiometry on the oxygen mass transport properties of La Sr Mn O thin filmscitations
- 2020Antiphase Boundaries Constitute Fast Cation Diffusion Paths in SrTiO3 Memristive Devicescitations
- 2015Complex behaviour of vacancy point-defects in SrRuO3 thin filmscitations
- 2013Simulation studies of the phase stability of the Srn+1Ti nO3n+1 Ruddlesden-Popper phasescitations
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article
Complex behaviour of vacancy point-defects in SrRuO3 thin films
Abstract
<p>The behaviour of point defects in thin, epitaxial films of the oxide electrode SrRuO<sub>3</sub> was probed by means of diffusion measurements. Thin-film SrRuO<sub>3</sub> was deposited by means of pulsed laser deposition (PLD) on (100) oriented, undoped single crystal SrTiO<sub>3</sub> substrates. <sup>16</sup>O/<sup>18</sup>O exchange anneals were employed to probe the behavior of oxygen vacancies. Anneals were performed in the temperature range 850 ≤ T/K ≤ 1100 at an oxygen partial pressure of pO<sub>2</sub> = 500 mbar. Samples were subsequently analyzed by means of Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS). The measured oxygen isotope penetration profiles comprised, surprisingly, two features. Oxygen tracer diffusion coefficients determined for thin-film SrRuO<sub>3</sub> are amongst the lowest measured for nominally undoped perovskite-type oxides. The activation enthalpy of oxygen tracer diffusion was found to be ≈ 2 eV. Diffusion of Ti from the SrTiO<sub>3</sub> substrates into the SrRuO<sub>3</sub> thin films, probing the cation defects, was also observed in ToF-SIMS profiles; here, too, the diffusion profiles showed two features. The activation enthalpy of titanium diffusion was found to be ΔH<sub>D<sub>Ti</sub></sub> ≈ 4 eV. We propose a model-cation sublattice equilibration-that accounts for the appearance of two features in both anion and cation diffusion profiles. We suggest that the observed complex behavior arises from the metastable defect structure of PLD thin films and the unusual defect structure of SrRuO<sub>3</sub>.</p>