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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Müller, Stefan
University of Würzburg
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2024Two-dimensional electron gases in AlYN/GaN heterostructures grown by metal-organic chemical vapor depositioncitations
- 2023A Study on the Performance of AlGaN/GaN HEMTs Regrown on Mg-Implanted GaN Layers with Low Channel Thicknesscitations
- 2022Leakage mechanism in AlxGa1-xN/GaN heterostructures with AlN interlayercitations
- 2022Short‐term heat treatment of the high‐alloy cold‐work tool steel X153CrMoV12 citations
- 2021Heterogeneous Adsorption and Local Ordering of Formate on a Magnetite Surfacecitations
- 2020Optimization of metal-organic chemical vapor deposition regrown n-GaN ; Optimization of MOCVD Regrown n-GaNcitations
- 2018Adsorption of acetone on rutile TiO2: a DFT and FTIRS study
- 2018A homogeneous and reproducible large-area, low dispersion GaN-on-Si normally-off 600 V transistor technology using selective GaN etchingcitations
- 2017The crystal structures of carbonyl iron powder – revised using in situ synchrotron XRPDcitations
- 2014Stable Silenolates and Brook-Type Silenes with Exocyclic Structurescitations
- 2014Impact of strain on electronic defects in (Mg,Zn)O thin films
- 2013Bismuth sulphide–polymer nanocomposites from a highly soluble bismuth xanthate precursorcitations
- 2012Plasma affected 2DEG properties on GaN/AlGaN/GaN HEMTscitations
- 2009Energy barriers and hysteresis in martensitic phase transformationscitations
- 2006X-ray topographic imaging of (AI,Ga)N/GaN based electronic device structures on SiC ; Röntgentopographie an (Al,Ga)N/GaN basierenden elektronischen Bauelementstrukturen auf SiCcitations
- 2000Analysis of peculiar structural defects created in GaAs by diffusion of copper ; Analyse von eigentümlichen Strukturdefekten, die durch Kupferdiffusion in GaAs erzeugt werdencitations
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article
Bismuth sulphide–polymer nanocomposites from a highly soluble bismuth xanthate precursor
Abstract
Bismuth sulphide nanocrystal–polymer hybrid layers are of interest for various optoelectronic, thermoelectric or sensing applications. In this work, we present a ligand-free in situ route for the formation of Bi2S3 nanorods directly within a polymer matrix. For this purpose, we introduce a novel bismuth xanthate (bismuth(III) O-3,3-dimethylbutan-2-yl dithiocarbonate), which is highly soluble in non-polar organic solvents. The analysis of the crystal structure revealed that the prepared bismuth xanthate crystallises in the monoclinic space group C2/c and forms dimers. The bismuth xanthate can be converted into nanocrystalline Bi2S3 with an orthorhombic crystal structure via a thermally induced solid state reaction at moderate temperatures below 200 °C. In combination with the high solubility in non-polar solvents this synthetic route for Bi2S3 is of particular interest for the preparation of Bi2S3–polymer nanocomposites as exemplarily investigated on Bi2S3–poly(methyl methacrylate) and Bi2S3–poly(3-hexylthiophene-2,5-diyl) (P3HT) nanocomposite layers. Atomic force and transmission electron microscopy revealed that Bi2S3 nanorods are dispersed in the polymer matrix. Photoluminescence experiments showed a quenching of the P3HT fluorescence with increasing Bi2S3 content in the hybrid layer.