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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Martin, Robert
University of Strathclyde
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (35/35 displayed)
- 2024Tin Gallium Oxide Epilayers on Different Substrates: Optical and Compositional Analysiscitations
- 2021Correlation between deep-level defects and functional properties of β-(SnxGa1-x)2O3 on Si photodetectorscitations
- 2020Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscopecitations
- 2020Metrology of crystal defects through intensity variations in secondary electrons from the diffraction of primary electrons in a scanning electron microscopecitations
- 2020Luminescence behavior of semipolar (10-11) InGaN/GaN "bow-tie" structures on patterned Si substratescitations
- 2020Electrical properties of (11-22) Si:AlGaN layers at high Al contents grown by metal-organic vapor phase epitaxycitations
- 2020Influence of micro-patterning of the growth template on defect reduction and optical properties of non-polar (11-20) GaNcitations
- 2019Indium incorporation in quaternary Inx Aly Ga1-x-y N for UVB-LEDscitations
- 2017Charge carrier localised in zero-dimensional (CH 3 NH 3 ) 3 Bi 2 1 9 clusterscitations
- 2017Spatially-resolved optical and structural properties of semi-polar (11-22) AlxGa1-xN with x up to 0.56citations
- 2017Charge carrier localised in zero-dimensional (CH3NH3)3Bi219 clusterscitations
- 2017Charge carrier localised in zero-dimensional (CH3NH3)3Bi219 clusterscitations
- 2017Charge carrier localised in zero-dimensional (CH3NH3)3Bi2I9 clusterscitations
- 2017Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive X-ray spectroscopycitations
- 2016Reprint of
- 2016RBS-channeling study of radiation damage in Ar+ implanted CuInSe2 crystalscitations
- 2016Electron channelling contrast imaging for III-nitride thin film structurescitations
- 2016Self-healing thermal annealingcitations
- 2016Analysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDscitations
- 2014Effect of mechanical compression on Cu(In,Ga)Se filmscitations
- 2012Characterization of InGaN and InAlN epilayers by microdiffraction X-Ray reciprocal space mapping
- 2012Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1-x)N layers as a function of InN content, layer thickness and growth parameterscitations
- 2010Al1-xInxN/GaN bilayers: Structure, morphology, and optical propertiescitations
- 2010Optical properties of thin films of Cu2ZnSnSe4 fabricated by sequential deposition and selenisation
- 2009Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition rangecitations
- 2009Star-shaped oligofluorene nanostructured blend materialscitations
- 2008Rare earth doping of III-nitride alloys by ion implantationcitations
- 2006Microfabrication in free-standing gallium nitride using UV laser micromachiningcitations
- 2006Influence of the annealing ambient on structural and optical properties of rare earth implanted GaN
- 2005Growth mechanism, microstructure, EPMA and Raman studies of pulsed laser deposited Nd1-xBa2+xCu3O7-delta thin filmscitations
- 2005Preparation of Cu(In,Ga)Se-2 thin film solar cells by two-stage selenization processes using N-2 gascitations
- 2005Studies of growth, microstructure, IMP Raman spectroscopy and annealing effect of pulsed laser deposited Ca-doped NBCO thin filmscitations
- 2005Selectively excited photoluminescence from Eu- implanted GaNcitations
- 2002GaN microcavities formed by laser lift-off and plasma etchingcitations
- 2001InGaN/GaN quantum well microcavities formed by laser lift-off and plasma etching
Places of action
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article
Effect of mechanical compression on Cu(In,Ga)Se films
Abstract
Cu(In,Ga)Se (CIGS) thin films were deposited by a two-step process on Mo-coated soda-lime glass substrates. The CuInGa (CIG) precursors were prepared in an in-line evaporation system at room temperature, and then selenised at 500 °C. The two-step processed CIGS films were mechanically compressed at 25 MPa to improve their optoelectronic properties, which were verified by photoluminescence (PL). The surface and structural properties were compared before and after compression. The mechanical compression has brought changes in the surface morphology and porosity without changing the structural properties of the material. The PL technique has been used to reveal changes in the electronic properties of the films. PL spectra at different excitation laser powers and temperatures were measured for as-grown as well as compressed samples. The PL spectra of the as-grown films revealed three broad and intense bands shifting at a significant rate towards higher energies (j-shift) with the increase in excitation power suggesting that the material is highly doped and compensated. At increasing temperature, the bands shift towards lower energies, which is a characteristic of the band tails generated by spatial potential fluctuation. The compression increases the intensity of energy bands by an order of magnitude and reduces the j-shift, demonstrating an improvement of the electronic properties.