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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Laitinen, Mikko
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2022Low-Temperature Atomic Layer Deposition of High-k SbOx for Thin Film Transistorscitations
- 2022Thermomechanical properties of aluminum oxide thin films made by atomic layer depositioncitations
- 2020Bandgap lowering in mixed alloys of Cs2Ag(SbxBi1−x)Br6 double perovskite thin filmscitations
- 2018Nanoscale Etching of GaAs and InP in Acidic H<sub>2</sub>O<sub>2</sub> Solution: A Striking Contrast in Kinetics and Surface Chemistrycitations
- 2017Stabilizing organic photocathodes by low-temperature atomic layer deposition of TiO<sub>2</sub>citations
- 2017Ozone-Based Atomic Layer Deposition of Al2O3 from Dimethylaluminum Chloride and Its Impact on Silicon Surface Passivationcitations
- 2016Characterization and Electrochemical Properties of Oxygenated Amorphous Carbon (a-C) Filmscitations
- 2015Atomic layer deposited lithium aluminum oxidecitations
- 2014Aluminum oxide from trimethylaluminum and water by atomic layer deposition:The temperature dependence of residual stress, elastic modulus, hardness and adhesioncitations
- 2013Atomic layer deposition of LixTiyOz thin filmscitations
- 2013ALD Al2O3 from TMA and water on Si: residual stress, elastic modulus, hardness and adhesion:residual stress, elastic modulus, hardness and adhesion
- 2013Variation of lattice constant and cluster formation in GaAsBicitations
- 2013ALD Al2O3 from TMA and water on Si: residual stress, elastic modulus, hardness and adhesion
- 2012Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF(6) based plasmascitations
- 2012Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmascitations
- 2011Controlling the crystallinity and roughness of atomic layer deposited titanium dioxide filmscitations
Places of action
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article
Atomic layer deposition of LixTiyOz thin films
Abstract
<p>Atomic layer deposition (ALD) was employed to deposit ternary films of LixTiyOz. The film growth at a deposition temperature of 225 degrees C was studied using both titanium tetra-isoropoxide (Ti((OPr)-Pr-i)(4)) and titanium tetrachloride (TiCl4) as titanium precursors. Lithium tert-butoxide ((LiOBu)-Bu-t) was applied as the lithium source and water was used as the oxygen source for all metal precursors. The type of titanium precursor chosen strongly affected film growth: with TiCl4 the resulting LixTiyOz films were highly air-sensitive and the lithium concentration was low, whereas with Ti((OPr)-Pr-i)(4) the films were relatively stable in air and with a lithium content which was easily controlled over a wide range. Film characterization indicated that part of the lithium in the film migrated onto the surface and formed carbonates. Films with suitable lithium contents crystallized into the spinel Li4Ti5O12 structure upon post-deposition annealing.</p>