| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bartlett, Philip N.
University of Southampton
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (41/41 displayed)
- 2024Electrodeposition of bismuth, tellurium and bismuth telluride through sub-10 nm mesoporous silica thin filmscitations
- 2024Electrodeposition of 2D layered tungsten diselenide thin films using a single source precursorcitations
- 2023Temperature effects on the electrodeposition of semiconductors from a weakly coordinating solventcitations
- 2022Mesoporous silica films as hard templates for electrodeposition of nanostructured goldcitations
- 2022Vertical and Lateral Electrodeposition of 2D Material Heterostructures
- 2022Diffusion in weakly coordinating solventscitations
- 2022Selection and characterisation of weakly coordinating solvents for semiconductor electrodepositioncitations
- 20222D material based optoelectronics by electroplating
- 20222D material based optoelectronics by electroplating
- 2021Electrodeposited WS 2 monolayers on patterned graphenecitations
- 2021Tungsten disulfide thin films via electrodeposition from a single source precursorcitations
- 2021Lateral growth of MoS2 2D material semiconductors over an insulator via electrodepositioncitations
- 2021Lateral growth of MoS 2 2D material semiconductors over an insulator via electrodepositioncitations
- 2020Large-area electrodeposition of few-layer MoS2 on graphene for 2D material heterostructurescitations
- 2020Thermoelectric properties of bismuth telluride thin films electrodeposited from a non-aqueous solutioncitations
- 2020Chloroantimonate electrochemistry in dichloromethanecitations
- 2020Large-area electrodeposition of few-layer MoS 2 on graphene for 2D material heterostructurescitations
- 2020Electrodeposition of MoS2 from dichloromethanecitations
- 2019Electrodeposition of bismuth telluride from a weakly coordinating, non-aqueous solutioncitations
- 2018Towards a 3D GeSbTe phase change memory with integrated selector by non-aqueous electrodepositioncitations
- 2018Electrodeposition of a functional solid state memory material – germanium antimony telluride from a non-aqueous plating bathcitations
- 2017Active gas replenishment and sensing of the wetting state in a submerged superhydrophobic surfacecitations
- 2017Plastic reactor suitable for high pressure and supercritical fluid electrochemistrycitations
- 2017Tin, bismuth, and tin–bismuth alloy electrodeposition from chlorometalate salts in deep eutectic solventscitations
- 2016Haloplumbate salts as reagents for the non-aqueous electrodeposition of leadcitations
- 2016A versatile precursor system for supercritical fluid electrodeposition of main-group materialscitations
- 2015Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge2Sb2Te5phase change memorycitations
- 2015A Versatile Precursor System for Supercritical Fluid Electrodeposition of Main-Group Materialscitations
- 2015Phase-change memory properties of electrodeposited Ge-Sb-Te thin filmcitations
- 2013Non-aqueous electrodeposition of metals and metalloids from halometallate saltscitations
- 2013A his-tagged Melanocarpus albomyces laccase and its electrochemistry upon immobilisation on NTA-modified electrodes and in conducting polymer filmscitations
- 2013The deposition of mesoporous Ni/Co alloy using cetyltrimethylammonium bromide as the surfactant in the lyotropic liquid crystalline phase bathcitations
- 2010Position-dependent coupling between a channel waveguide and a distorted microsphere resonatorcitations
- 2010Synthesis and structure of [{C7F15CO2}2AgAu(PPh3)]2 and its use in electrodeposition of gold–silver alloyscitations
- 2009Relating SERS intensity to specific plasmon modes on sphere segment void surfacescitations
- 2009Electrodeposition of metals from supercritical fluidscitations
- 2009Electrodeposition of highly ordered macroporous iridium oxide through self-assembled colloidal templatescitations
- 2007Geometrical multilayers: coercivity in magnetic 3-D nanostructurescitations
- 2007SERS at structured palladium and platinum surfacescitations
- 2006Orientation and symmetry control of inverse sphere magnetic nanoarrays by guided self-assemblycitations
- 2005Shape-induced anisotropy in antidot arrays from self-assembled templatescitations
Places of action
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article
Non-aqueous electrodeposition of metals and metalloids from halometallate salts
Abstract
A versatile electrochemical system for the non-aqueous electrodeposition of crystalline, oxide free p-block metals and metalloids is described, and it is demonstrated that by combining mixtures of these reagents, this system is suitable for electrodeposition of binary semiconductor alloys. The tetrabutylammonium halometallates, [NnBu4][InCl4], [NnBu4][SbCl4], [NnBu4][BiCl4], [NnBu4]2[SeCl6] and [NnBu4]2[TeCl6], are readily dissolved in CH2Cl2 and form reproducible electrochemical systems with good stability in the presence of a [NnBu4]Cl supporting electrolyte. The prepared electrolytes show a wide potential window and the electrodeposition of indium, antimony, bismuth, tellurium and selenium on glassy carbon and titanium nitride electrodes has been demonstrated. The deposited elements were characterised by scanning electron microscopy, energy dispersive X-ray analysis and powder X-ray diffraction. The compatibility of the reagents permits the preparation of a single electrolyte containing several halometallate species which allows the electrodeposition of binary materials, as is demonstrated for InSb. This room temperature, ‘bottom-up’ electrochemical approach should thus be suitable for the one-pot deposition of a wide range of compound semiconductor materials.