| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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De Groot, Cornelis
University of Southampton
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (41/41 displayed)
- 2022Vertical and Lateral Electrodeposition of 2D Material Heterostructures
- 20222D material based optoelectronics by electroplating
- 2022Room temperature phase transition of W-doped VO2 by atomic layer deposition on 200 mm Si wafers and flexible substratescitations
- 2021Low pressure CVD of GeE (E = Te, Se, S) thin films from alkylgermanium chalcogenolate precursors and effect of the deposition temperature on the thermoelectric performance of GeTecitations
- 2021Low temperature CVD of thermoelectric SnTe thin films from the single source precursor, [nBu3Sn(TenBu)]citations
- 2021Tungsten disulfide thin films via electrodeposition from a single source precursorcitations
- 2021Lateral growth of MoS2 2D material semiconductors over an insulator via electrodepositioncitations
- 2020Large-area electrodeposition of few-layer MoS2 on graphene for 2D material heterostructurescitations
- 2020Thermoelectric properties of bismuth telluride thin films electrodeposited from a non-aqueous solutioncitations
- 2020Selective chemical vapor deposition approach for Sb2Te3 thin film micro-thermoelectric generatorscitations
- 2020Improved thermoelectric performance of Bi2Se3 alloyed Bi2Te3 thin films via low pressure chemical vapour depositioncitations
- 2020Electrodeposition of MoS2 from dichloromethanecitations
- 2019Electrodeposition of bismuth telluride from a weakly coordinating, non-aqueous solutioncitations
- 2018Towards a 3D GeSbTe phase change memory with integrated selector by non-aqueous electrodepositioncitations
- 2018Electrodeposition of a functional solid state memory material – germanium antimony telluride from a non-aqueous plating bathcitations
- 2017Selection by current compliance of negative and positive bipolar resistive switching behaviour in ZrO2−x/ZrO2 bilayer memorycitations
- 2016Forming-free resistive switching of tunable ZnO films grown by atomic layer depositioncitations
- 2016Nanoscale arrays of antimony telluride single crystals by selective chemical vapor depositioncitations
- 2015Chemical vapour deposition of antimony chalcogenides with positional and orientational control: precursor design and substrate selectivitycitations
- 2015Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge2Sb2Te5phase change memorycitations
- 2015Phase-change memory properties of electrodeposited Ge-Sb-Te thin filmcitations
- 2014The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devicescitations
- 2013Non-aqueous electrodeposition of metals and metalloids from halometallate saltscitations
- 2013Low pressure chemical vapour deposition of crystalline Ga2Te3 and Ga2Se3 thin films from single source precursors using telluroether and selenoether complexescitations
- 2012Highly selective chemical vapor deposition of tin diselenide thin films onto patterned substrates via single source diselenoether precursorscitations
- 2012Low power hydrogen gas sensors using electrodeposited PdNi-Si Schottky diodescitations
- 2011Metal catalyst-free growth of carbon nanotubes and their application in field effect transitors
- 2011Metal-catalyst-free growth of carbon nanotubes and their application in field-effect transistors
- 2010Fabrication and simulation of nanostructures for domain wall magnetoresistance studies on nickelcitations
- 2010Chemical Vapour Deposition of CNTs Using Structural Nanoparticle Catalysts
- 2009Growth of single-walled carbon nanotubes using germanium nanocrystals formed by implantationcitations
- 2009Inhomogeneous Ni/Ge Schottky barriers due to variation in Fermi-level pinning
- 2008Numerical investigation of domain walls in constrained geometriescitations
- 2008Fabrication of Nano-Structured Gold Arrays by Guided Self-assembly for Plasmonics
- 2007A study on Ge based spin-LED for spintronic applications.
- 2006The structural and electrical properties of thermally grown TiO2 thin films
- 2006Enhancement of resistivity of Czochralski silicon by deep level manganese dopingcitations
- 2006Orientation and symmetry control of inverse sphere magnetic nanoarrays by guided self-assemblycitations
- 2005Shape-induced anisotropy in antidot arrays from self-assembled templatescitations
- 2005Metal catalyst-free low-temperature carbon nanotube growth on SiGe islandscitations
- 2005Catalyst free low temperature direct growth of carbon nanotubes on SiGe islands and Ge quantum dots
Places of action
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article
Non-aqueous electrodeposition of metals and metalloids from halometallate salts
Abstract
A versatile electrochemical system for the non-aqueous electrodeposition of crystalline, oxide free p-block metals and metalloids is described, and it is demonstrated that by combining mixtures of these reagents, this system is suitable for electrodeposition of binary semiconductor alloys. The tetrabutylammonium halometallates, [NnBu4][InCl4], [NnBu4][SbCl4], [NnBu4][BiCl4], [NnBu4]2[SeCl6] and [NnBu4]2[TeCl6], are readily dissolved in CH2Cl2 and form reproducible electrochemical systems with good stability in the presence of a [NnBu4]Cl supporting electrolyte. The prepared electrolytes show a wide potential window and the electrodeposition of indium, antimony, bismuth, tellurium and selenium on glassy carbon and titanium nitride electrodes has been demonstrated. The deposited elements were characterised by scanning electron microscopy, energy dispersive X-ray analysis and powder X-ray diffraction. The compatibility of the reagents permits the preparation of a single electrolyte containing several halometallate species which allows the electrodeposition of binary materials, as is demonstrated for InSb. This room temperature, ‘bottom-up’ electrochemical approach should thus be suitable for the one-pot deposition of a wide range of compound semiconductor materials.