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Reinle-Schmitt, M. L.
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article
Chemistry and structure of homoepitaxial SrTiO3 films and their influence on oxide-heterostructure interfaces
Abstract
<p>The properties of single-crystal SrTiO<sub>3</sub> substrates and homoepitaxial SrTiO<sub>3</sub> films grown by pulsed laser deposition have been compared, in order to understand the loss of interfacial conductivity when more than a critical thickness of nominally homoepitaxial SrTiO<sub>3</sub> is inserted between a LaAlO<sub>3</sub> film and a SrTiO<sub>3</sub> substrate. In particular, the chemical composition and the structure of homoepitaxial SrTiO<sub>3</sub> investigated by low-energy ion-scattering and surface X-ray diffraction show that for insulating heterointerfaces, a Sr-excess is present between the LaAlO<sub>3</sub> and homoepitaxial SrTiO<sub>3</sub>. Furthermore, an increase in the out-of-plane lattice constant is observed in LaAlO <sub>3</sub>, indicating that the conductivity both with and without insertion of the SrTiO<sub>3</sub> thin film originates from a Zener breakdown associated with the polar catastrophe. When more than a critical thickness of homoepitaxial SrTiO<sub>3</sub> is inserted between LaAlO<sub>3</sub> and SrTiO<sub>3</sub>, the electrons transferred by the electronic reconstruction are trapped by the formation of a Sr-rich secondary phase and Sr-vacancies. The migration of Sr towards the surface of homoepitaxial SrTiO<sub>3</sub> and accompanying loss of interfacial conductivity can be delayed by reducing the Sr-content in the PLD target.</p>