| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Paul, Shashi
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2023Electrical Bistability by Creating an Internal Electrical Field and Its Application in Emerging Two-terminal Electronic Memory Devicescitations
- 2018Stability of Hydrogenated Amorphous Carbon thin films for application in Electronic Devicescitations
- 2017Creating Electrical Bistability Using Nano-bits – Application in 2-Terminal Memory Devicescitations
- 2017A study of Selenium nanoparticles as Charge Storage Element for Flexible semi-transparent memory Devicescitations
- 20173D Printing of Flexible Two Terminal Electronic Memory Devices
- 2014Route to enhance the efficiency of organic photovoltaic solar cells - by adding ferroelectric nanoparticles to P3HT/PCBM admixturecitations
- 2012Rare-earth substituted HfO2 thin films grown by metalorganic chemical vapor deposition
- 2010Small organic molecules for electrically re-writable non-volatile polymer memory devices.citations
- 2009Lanthanide oxide thin films by metalorganic chemical vapor deposition employing volatile guanidinate precursors
- 2009Lanthanide oxide thin films by metalorganic chemical vapor deposition employing volatile guanidinate precursors.citations
- 2009Electrical and morphological properties of polystyrene thin films for organic electronic applications.citations
- 2008Electrically re-writable non-volatile memory device - using a blend of sea salt and polymer.citations
Places of action
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booksection
Electrical Bistability by Creating an Internal Electrical Field and Its Application in Emerging Two-terminal Electronic Memory Devices
Abstract
<jats:p>This chapter focusses on the electrical bistability observed in nanocomposite memory devices that have been studied over two decades. Bistability, in the context of memory devices, has been discussed and visual tools have been employed for its examination as a general mathematical function. The bistability observed in memory devices, in terms of electrical hysteresis, has been focussed and typical curves observed in several studies over the last fifty years have been consolidated and systematically examined. The development of the field has led to much confusion in terms of understanding of the device switching mechanism, which has been investigated in detail. The discrepancies in the proposed device behaviour and the observations have over time led to the rise of many opinions/models to explain the physics of the device conduction switching. In this chapter, the charge-trap models have been examined and solutions to some open questions have been proposed in terms of analysing at the system from the perspective of field generation, instead of the material interaction.</jats:p>