| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kronast, Florian
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (27/27 displayed)
- 2022Influence of magnetic domain walls on all-optical magnetic toggle switching in a ferrimagnetic GdFe filmcitations
- 2022Strain-induced shape anisotropy in antiferromagnetic structures
- 2021Identification of Néel vector orientation in antiferromagnetic domains switched by currents in NiO/Pt thin films
- 2020Variations in the magnetic properties of meteoritic cloudy zonecitations
- 2020Tunable magnetic vortex dynamics in ion-implanted permalloy diskscitations
- 2020Propagation length of antiferromagnetic magnons governed by domain configurations
- 2020Structural sensitivity of the spin Hall magnetoresistance in antiferromagnetic thin films
- 2020Variations in the Magnetic Properties of Meteoritic Cloudy Zonecitations
- 2019Steering of magnetic domain walls by single ultrashort laser pulses
- 2018Spatially resolved investigation of all optical magnetization switching in TbFe alloys
- 2018Microstructural and paleomagnetic insight into the cooling history of the IAB parent bodycitations
- 2017Spatially resolved investigation of all optical magnetization switching in TbFe alloyscitations
- 2017Inter-Layer Coupling Induced Valence Band Edge Shift in Mono- to Few-Layer MoS2citations
- 2017Inter-Layer Coupling Induced Valence Band Edge Shift in Mono- to Few-Layer MoS2citations
- 2017Influence of magnetic field and ferromagnetic film thickness on domain pattern transfer in multiferroic heterostructurescitations
- 2016Movement of magnetic domain walls induced by single femtosecond laser pulsescitations
- 2016Encoding magnetic states in monopole-like configurations using superconducting dotscitations
- 2016Growth Instabilities as a Source of Surface Chemical Structuration in Functional Perovskite Thin Filmscitations
- 2013Lateral inhomogeneity of the Mg/(Zn+Mg) composition at the (Zn,Mg)O/CuIn(S,Se)2 thin-film solar cell interface revealed by photoemission electron microscopycitations
- 2013Magnetic structure of epitaxial self-assembled La0.7Sr0.3MnO3 nanoislands
- 2013Photoemission electron microscopy study of sub-200 nm self-assembled La0.7Sr0.3MnO3 epitaxial islandscitations
- 2012X-ray photoemission electron microscopy studies of local magnetization in Py antidot array thin filmscitations
- 2012Disentangling the Physical Contributions to the Electrical Resistance in Magnetic Domain Walls: A Multiscale Studycitations
- 2011Photoemission electron microscopy of three-dimensional magnetization configurations in core-shell nanostructurescitations
- 2010Direct determination of large Spin-Torque nonadiabaticity in Vortex Core Dynamicscitations
- 2008Femtosecond spin dynamics of ferromagnetic thin films and nanodots probed by spin polarized photoemission electron microscopycitations
- 2006Magnetic coupling in (GaMn)As ferromagnetic semiconductors – studied by soft x-ray spectroscopy ; Magnetische Kopplung in dem ferromagnetischen Halbleiter (GaMn)As – spektroskopische Untersuchung mittels Röntgenspektroskopie
Places of action
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article
Inter-Layer Coupling Induced Valence Band Edge Shift in Mono- to Few-Layer MoS2
Abstract
Recent progress in the synthesis of monolayer MoS2, a two-dimensional direct band-gap semiconductor, is paving new pathways toward atomically thin electronics. Despite the large amount of literature, fundamental gaps remain in understanding electronic properties at the nanoscale. Here, we report a study of highly crystalline islands of MoS2 grown via a refined chemical vapor deposition synthesis technique. Using high resolution scanning tunneling microscopy and spectroscopy (STM/STS), photoemission electron microscopy/spectroscopy (PEEM) and μ-ARPES we investigate the electronic properties of MoS2 as a function of the number of layers at the nanoscale and show in-depth how the band gap is affected by a shift of the valence band edge as a function of the layer number. Green’s function based electronic structure calculations were carried out in order to shed light on the mechanism underlying the observed bandgap reduction with increasing thickness, and the role of the interfacial Sulphur atoms is clarified. Our study, which gives new insight into the variation of electronic properties of MoS2 films with thickness bears directly on junction properties of MoS2, and thus impacts electronics application of MoS2.