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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Wang, Kai
University of Twente
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2024Improved Performance of High‐Entropy Disordered Rocksalt Oxyfluoride Cathode by Atomic Layer Deposition Coating for Li‐Ion Batteriescitations
- 2024Residual Stress Analysis of Thin Film Materials for Fabricating Suspended Low Stress Si3N4 Waveguides on Sapphire
- 2023Synthesis and Structure Stabilization of Disordered Rock Salt Mn/V-Based Oxyfluorides as Cathode Materials for Li-Ion Batteries
- 2022White light emission with unity efficiency from Cs 2 Na 1−x Ag x In 1−y Bi y Cl 6 double perovskites:the role of bismuth and silvercitations
- 2022High-Entropy Polyanionic Lithium Superionic Conductorscitations
- 2022White light emission with unity efficiency from Cs2Na1−xAgxIn1−yBiyCl6 double perovskitescitations
- 2022Au-Pd separation enhances bimetallic catalysis of alcohol oxidationcitations
- 2020Multilayer Structures of Graphene and Pt Nanoparticles: A Multiscale Computational Studycitations
- 2016Effect of orbital hybridization on spin-polarized tunneling across Co/C60 interfacescitations
- 2015AUC and Small-Angle Scattering for Membrane Proteins.
- 2015Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barrierscitations
- 2013Tunneling anisotropic magnetoresistance in Co/AIOx/Al tunnel junctions with fcc Co (111) electrodescitations
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article
Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barriers
Abstract
A new approach in spintronics is based on spin-polarized charge transport phenomena governed by antiferromagnetic (AFM) materials. Recent studies have demonstrated the feasibility of this approach for AFM metals and semiconductors. We report tunneling anisotropic magnetoresistance (TAMR) due to the rotation of antiferromagnetic moments of an insulating CoO layer, incorporated into a tunnel junction consisting of sapphire(substrate)/fcc-Co/CoO/AlOx/Al. The ferromagnetic Co layer is exchange coupled to the AFM CoO layer and drives rotation of the AFM moments in an external magnetic field. The results may help pave the way towards the development of spintronic devices based on AFM insulators.