| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kuwahara, Takuya
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2024Superlubricity of silicon-based ceramics sliding against hydrogenated amorphous carbon in ultrahigh vacuum: Mechanisms of transfer film formationcitations
- 2024Surface depassivation via B-O dative bonds affects the friction performance of B-doped carbon coatings
- 2021Superlow friction of a-C:H coatings in vacuum: passivation regimes and structural characterization of the sliding interfacescitations
- 2021Interplay of mechanics and chemistry governs wear of diamond-like carbon coatings interacting with ZDDP-additivated lubricantscitations
- 2021Interplay of mechanics and chemistry governs wear of diamond-like carbon coatings interacting with ZDDP-additivated lubricantscitations
- 2021Superlow friction of a-C:H coatings in vacuum: Passivation regimes and structural characterization of the sliding interfacescitations
- 2021In situ synthesis of graphene nitride nanolayers on glycerol-lubricated Si3N4 for superlubricity applicationscitations
- 2019Mechano-chemical decomposition of organic friction modifiers with multiple reactive centres induces superlubricity of ta-Ccitations
- 2015The reason why thin-film silicon grows layer by layer in plasma-enhanced chemical vapor depositioncitations
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article
The reason why thin-film silicon grows layer by layer in plasma-enhanced chemical vapor deposition
Abstract
<jats:title>Abstract</jats:title><jats:p>Thin-film Si grows layer by layer on Si(001)-(2 × 1):H in plasma-enhanced chemical vapor deposition. Here we investigate the reason why this occurs by using quantum chemical molecular dynamics and density functional theory calculations. We propose a dangling bond (DB) diffusion model as an alternative to the SiH<jats:sub>3</jats:sub> diffusion model, which is in conflict with first-principles calculation results and does not match the experimental evidence. In our model, DBs diffuse rapidly along an upper layer consisting of Si-H<jats:sub>3</jats:sub> sites and then migrate from the upper layer to a lower layer consisting of Si-H sites. The subsequently incident SiH<jats:sub>3</jats:sub> radical is then adsorbed onto the DB in the lower layer, producing two-dimensional growth. We find that DB diffusion appears analogous to H diffusion and can explain the reason why the layer-by-layer growth occurs.</jats:p>