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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Millis, Andrew J.
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Topics
Publications (5/5 displayed)
- 2023Picosecond volume expansion drives a later-time insulator-metal transition in a nano-textured Mott Insulator
- 2022Quantifying the role of the lattice in metal–insulator phase transitionscitations
- 2012Covalency, double-counting, and the metal-insulator phase diagram in transition metal oxidescitations
- 2011Role of oxygen-oxygen hopping in the three-band copper-oxide modelcitations
- 2009Correlation strength, gaps, and particle-hole asymmetry in high- Tc cupratescitations
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article
Quantifying the role of the lattice in metal–insulator phase transitions
Abstract
<jats:title>Abstract</jats:title><jats:p>Many materials exhibit phase transitions at which both the electronic properties and the crystal structure change. Some authors have argued that the change in electronic order is primary, with the lattice distortion a relatively minor side-effect, and others have argued that the lattice distortions play an essential role in the energetics of the transition. In this paper, we introduce a formalism that resolves this long-standing problem. The methodology works with any electronic structure method that produces solutions of the equation of state determining the electronic order parameter as a function of lattice distortion. We use the formalism to settle the question of the physics of the metal–insulator transitions in the rare-earth perovskite nickelates (<jats:italic>R</jats:italic>NiO<jats:sub>3</jats:sub>) and Ruddlesden–Popper calcium ruthenates (Ca<jats:sub>2</jats:sub>RuO<jats:sub>4</jats:sub>) in bulk, heterostructure, and epitaxially strained thin film forms, finding that electron-lattice coupling is key to stabilizing the insulating state in both classes of materials.</jats:p>