Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (2/2 displayed)

  • 2023Defects mediated weak ferromagnetism in Zn1−yCyO (0.00 ≤ y ≤ 0.10) nanorods semiconductors for spintronics applications9citations
  • 2021IMPROVEMENT IN STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF ITO FILM THROUGH AlN AND HfO<sub>2</sub>BUFFER LAYERS5citations

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Shah, Saqlain A.
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Samad, Abdus
1 / 3 shared
Rizwan, Syed
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Akhtar, M. Tanveer
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Arshad, M.
1 / 4 shared
Awan, Saif Ullah
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Ahmed, Naser M.
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Altowyan, Abeer S.
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Afzal, Naveed
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Najm, Asmaa Soheil
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Abdullah, Mahir Faris
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Sulaiman, Noor Humam
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2023
2021

Co-Authors (by relevance)

  • Shah, Saqlain A.
  • Samad, Abdus
  • Rizwan, Syed
  • Akhtar, M. Tanveer
  • Arshad, M.
  • Awan, Saif Ullah
  • Ahmed, Naser M.
  • Altowyan, Abeer S.
  • Afzal, Naveed
  • Najm, Asmaa Soheil
  • Abdullah, Mahir Faris
  • Sulaiman, Noor Humam
OrganizationsLocationPeople

article

Defects mediated weak ferromagnetism in Zn1−yCyO (0.00 ≤ y ≤ 0.10) nanorods semiconductors for spintronics applications

  • Shah, Saqlain A.
  • Samad, Abdus
  • Rafique, Mohsin
  • Rizwan, Syed
  • Akhtar, M. Tanveer
  • Arshad, M.
  • Awan, Saif Ullah
Abstract

<jats:title>Abstract</jats:title><jats:p>A series of carbon-doped ZnO [Zn<jats:sub>1−y</jats:sub>C<jats:sub>y</jats:sub>O (0.00 ≤ <jats:italic>y</jats:italic> ≤ 0.10)] nanorods were synthesized using a cost-effective low-temperature (85 °C) dip coating technique. X-ray diffractometer scans of the samples revealed the hexagonal structure of the C-doped ZnO samples, except for y = 0.10. XRD analysis confirmed a decrease in the unit cell volume after doping C into the ZnO matrix, likely due to the incorporation of carbon at oxygen sites (CO defects) resulting from ionic size differences. The morphological analysis confirmed the presence of hexagonal-shaped nanorods. X-ray photoelectron spectroscopy identified C–Zn–C bonding, i.e., CO defects, Zn–O–C bond formation, O–C–O bonding, oxygen vacancies, and sp<jats:sup>2</jats:sup>-bonded carbon in the C-doped ZnO structure with different compositions. We analyzed the deconvoluted PL visible broadband emission through fitted Gaussian peaks to estimate various defects for electron transition within the bandgap. Raman spectroscopy confirmed the vibrational modes of each constituent. We observed a stronger room-temperature ferromagnetic nature in the y = 0.02 composition with a magnetization of 0.0018 emu/cc, corresponding to the highest CO defects concentration and the lowest measured bandgap (3.00 eV) compared to other samples. Partial density of states analysis demonstrated that magnetism from carbon is dominant due to its p-orbitals. We anticipate that if carbon substitutes oxygen sites in the ZnO structure, the C-2p orbitals become localized and create two holes at each site, leading to enhanced p–p type interactions and strong spin interactions between carbon atoms and carriers. This phenomenon can stabilize the long-range order of room-temperature ferromagnetism properties for spintronic applications.</jats:p>

Topics
  • density
  • impedance spectroscopy
  • Carbon
  • x-ray diffraction
  • x-ray photoelectron spectroscopy
  • Oxygen
  • semiconductor
  • defect
  • Raman spectroscopy
  • magnetization
  • dip coating