| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Verseils, M.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (1/1 displayed)
Places of action
| Organizations | Location | People |
|---|
article
Broadband infrared study of pressure-tunable Fano resonance and metallization transition in 2H-$$hbox {MoTe}_2$$
Abstract
<jats:title>Abstract</jats:title><jats:p>High pressure is a proven effective tool for modulating inter-layer interactions in semiconducting transition metal dichalcogenides, which leads to significant band structure changes. Here, we present an extended infrared study of the pressure-induced semiconductor-to-metal transition in 2H-<jats:inline-formula><jats:alternatives><jats:tex-math> {MoTe}_2</jats:tex-math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mtext>MoTe</mml:mtext><mml:mn>2</mml:mn></mml:msub></mml:math></jats:alternatives></jats:inline-formula>, which reveals that the metallization process at 13–15 GPa is not associated with the indirect band-gap closure, occurring at 24 GPa. A coherent picture is drawn where n-type doping levels just below the conduction band minimum play a crucial role in the early metallization transition. Doping levels are also responsible for the asymmetric Fano line-shape of the <jats:inline-formula><jats:alternatives><jats:tex-math> {E}_{1u}</jats:tex-math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mtext>E</mml:mtext><mml:mrow><mml:mn>1</mml:mn><mml:mi>u</mml:mi></mml:mrow></mml:msub></mml:math></jats:alternatives></jats:inline-formula> infrared-active mode, which has been here detected and analyzed for the first time in a transition metal dichalcogenide compound. The pressure evolution of the phonon profile under pressure shows a symmetrization in the 13–15 GPa pressure range, which occurs simultaneously with the metallization and confirms the scenario proposed for the high pressure behaviour of 2H-<jats:inline-formula><jats:alternatives><jats:tex-math> {MoTe}_2</jats:tex-math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mtext>MoTe</mml:mtext><mml:mn>2</mml:mn></mml:msub></mml:math></jats:alternatives></jats:inline-formula>.</jats:p>