| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Mkhoyan, K. Andre
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2023Optical Properties of Electrochemically Gated La 1− xSr xCoO 3−δ as a Topotactic Phase-Change Materialcitations
- 2023Anomalous strain relaxation and its impact on the valence-driven spin-state/metal-insulator transition in epitaxial (Pr1−yYy)1−xCaxCoO3−δcitations
- 2023Spin Hall conductivity in Bi$_{1-x}$Sb$_x$ as an experimental test of bulk-boundary correspondence
- 2021Spin and Charge Interconversion in Dirac-Semimetal Thin Filmscitations
- 2020Layer Dependence of Dielectric Response and Water-Enhanced Ambient Degradation of Highly Anisotropic Black Ascitations
- 2020Ambipolar transport in van der Waals black arsenic field effect transistorscitations
- 2020Plasmonic nanocomposites of zinc oxide and titanium nitridecitations
- 2020Self-Assembled Periodic Nanostructures Using Martensitic Phase Transformationscitations
- 2020Thermal transport in ZnO nanocrystal networks synthesized by nonthermal plasmacitations
- 2018Room-temperature high spin–orbit torque due to quantum confinement in sputtered BixSe(1–x) filmscitations
- 2015Giant Spin Pumping and Inverse Spin Hall Effect in the Presence of Surface and Bulk Spin-Orbit Coupling of Topological Insulator Bi2Se3citations
- 2015Nonequilibrium-Plasma-Synthesized ZnO Nanocrystals with Plasmon Resonance Tunable via Al Doping and Quantum Confinementcitations
- 2015Hybrid molecular beam epitaxy for the growth of stoichiometric BaSnO3citations
- 2012Sputter deposition of semicrystalline tin dioxide filmscitations
- 2012Improving the damp-heat stability of copper indium gallium diselenide solar cells with a semicrystalline tin dioxide overlayercitations
- 2010Orientation and morphological evolution of catalyst nanoparticles during carbon nanotube growthcitations
- 2010Effect of hydrogen on catalyst nanoparticles in carbon nanotube growthcitations
Places of action
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article
Room-temperature high spin–orbit torque due to quantum confinement in sputtered BixSe(1–x) films
Abstract
<p>The spin–orbit torque (SOT) that arises from materials with large spin–orbit coupling promises a path for ultralow power and fast magnetic-based storage and computational devices. We investigated the SOT from magnetron-sputtered Bi<sub>x</sub>Se<sub>(1–x)</sub> thin films in Bi<sub>x</sub>Se<sub>(1–x)</sub>/Co<sub>20</sub>Fe<sub>60</sub>B<sub>20</sub> heterostructures by using d.c. planar Hall and spin-torque ferromagnetic resonance (ST-FMR) methods. Remarkably, the spin torque efficiency (θ<sub>S</sub>) was determined to be as large as 18.62 ± 0.13 and 8.67 ± 1.08 using the d.c. planar Hall and ST-FMR methods, respectively. Moreover, switching of the perpendicular CoFeB multilayers using the SOT from the Bi<sub>x</sub>Se<sub>(1–x)</sub> was observed at room temperature with a low critical magnetization switching current density of 4.3 × 10<sup>5</sup> A cm<sup>–2</sup>. Quantum transport simulations using a realistic sp<sup>3</sup> tight-binding model suggests that the high SOT in sputtered Bi<sub>x</sub>Se<sub>(1–x)</sub> is due to the quantum confinement effect with a charge-to-spin conversion efficiency that enhances with reduced size and dimensionality. The demonstrated θ<sub>S</sub>, ease of growth of the films on a silicon substrate and successful growth and switching of perpendicular CoFeB multilayers on Bi<sub>x</sub>Se<sub>(1–x)</sub> films provide an avenue for the use of Bi<sub>x</sub>Se<sub>(1–x)</sub> as a spin density generator in SOT-based memory and logic devices.</p>