| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Quarterman, P.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (2/2 displayed)
Places of action
| Organizations | Location | People |
|---|
article
Room-temperature high spin–orbit torque due to quantum confinement in sputtered BixSe(1–x) films
Abstract
<p>The spin–orbit torque (SOT) that arises from materials with large spin–orbit coupling promises a path for ultralow power and fast magnetic-based storage and computational devices. We investigated the SOT from magnetron-sputtered Bi<sub>x</sub>Se<sub>(1–x)</sub> thin films in Bi<sub>x</sub>Se<sub>(1–x)</sub>/Co<sub>20</sub>Fe<sub>60</sub>B<sub>20</sub> heterostructures by using d.c. planar Hall and spin-torque ferromagnetic resonance (ST-FMR) methods. Remarkably, the spin torque efficiency (θ<sub>S</sub>) was determined to be as large as 18.62 ± 0.13 and 8.67 ± 1.08 using the d.c. planar Hall and ST-FMR methods, respectively. Moreover, switching of the perpendicular CoFeB multilayers using the SOT from the Bi<sub>x</sub>Se<sub>(1–x)</sub> was observed at room temperature with a low critical magnetization switching current density of 4.3 × 10<sup>5</sup> A cm<sup>–2</sup>. Quantum transport simulations using a realistic sp<sup>3</sup> tight-binding model suggests that the high SOT in sputtered Bi<sub>x</sub>Se<sub>(1–x)</sub> is due to the quantum confinement effect with a charge-to-spin conversion efficiency that enhances with reduced size and dimensionality. The demonstrated θ<sub>S</sub>, ease of growth of the films on a silicon substrate and successful growth and switching of perpendicular CoFeB multilayers on Bi<sub>x</sub>Se<sub>(1–x)</sub> films provide an avenue for the use of Bi<sub>x</sub>Se<sub>(1–x)</sub> as a spin density generator in SOT-based memory and logic devices.</p>