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Zhang, Delin
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article
Room-temperature high spin–orbit torque due to quantum confinement in sputtered BixSe(1–x) films
Abstract
<p>The spin–orbit torque (SOT) that arises from materials with large spin–orbit coupling promises a path for ultralow power and fast magnetic-based storage and computational devices. We investigated the SOT from magnetron-sputtered Bi<sub>x</sub>Se<sub>(1–x)</sub> thin films in Bi<sub>x</sub>Se<sub>(1–x)</sub>/Co<sub>20</sub>Fe<sub>60</sub>B<sub>20</sub> heterostructures by using d.c. planar Hall and spin-torque ferromagnetic resonance (ST-FMR) methods. Remarkably, the spin torque efficiency (θ<sub>S</sub>) was determined to be as large as 18.62 ± 0.13 and 8.67 ± 1.08 using the d.c. planar Hall and ST-FMR methods, respectively. Moreover, switching of the perpendicular CoFeB multilayers using the SOT from the Bi<sub>x</sub>Se<sub>(1–x)</sub> was observed at room temperature with a low critical magnetization switching current density of 4.3 × 10<sup>5</sup> A cm<sup>–2</sup>. Quantum transport simulations using a realistic sp<sup>3</sup> tight-binding model suggests that the high SOT in sputtered Bi<sub>x</sub>Se<sub>(1–x)</sub> is due to the quantum confinement effect with a charge-to-spin conversion efficiency that enhances with reduced size and dimensionality. The demonstrated θ<sub>S</sub>, ease of growth of the films on a silicon substrate and successful growth and switching of perpendicular CoFeB multilayers on Bi<sub>x</sub>Se<sub>(1–x)</sub> films provide an avenue for the use of Bi<sub>x</sub>Se<sub>(1–x)</sub> as a spin density generator in SOT-based memory and logic devices.</p>