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Ventrapragada, Rama Satya Sandilya
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article
Giant electrostriction-like response from defective non-ferroelectric epitaxial BaTiO3 integrated on Si (100)
Abstract
<jats:title>Abstract</jats:title><jats:p>Lead-free, silicon compatible materials showing large electromechanical responses comparable to, or better than conventional relaxor ferroelectrics, are desirable for various nanoelectromechanical devices and applications. Defect-engineered electrostriction has recently been gaining popularity to obtain enhanced electromechanical responses at sub 100 Hz frequencies. Here, we report record values of electrostrictive strain coefficients (<jats:italic>M</jats:italic><jats:sub><jats:italic>31</jats:italic></jats:sub>) at frequencies as large as 5 kHz (1.04×10<jats:sup>−14</jats:sup> m<jats:sup>2</jats:sup>/V<jats:sup>2</jats:sup> at 1 kHz, and 3.87×10<jats:sup>−15</jats:sup> m<jats:sup>2</jats:sup>/V<jats:sup>2</jats:sup> at 5 kHz) using A-site and oxygen-deficient barium titanate thin-films, epitaxially integrated onto Si. The effect is robust and retained upon cycling upto 6 million times. Our perovskite films are non-ferroelectric, exhibit a different symmetry compared to stoichiometric BaTiO<jats:sub>3</jats:sub> and are characterized by twin boundaries and nano polar-like regions. We show that the dielectric relaxation arising from the defect-induced features correlates well with the observed giant electrostriction-like response. These films show large coefficient of thermal expansion (2.36 × 10<jats:sup>−5</jats:sup>/K), which along with the giant <jats:italic>M</jats:italic><jats:sub><jats:italic>31</jats:italic></jats:sub> implies a considerable increase in the lattice anharmonicity induced by the defects. Our work provides a crucial step forward towards formulating guidelines to engineer large electromechanical responses even at higher frequencies in lead-free thin films.</jats:p>