• Jang, Sora
• Yang, Jihoon
• Chen, Cindy Yueli
• Han, Juwon
• Choe, Myeonggi
• Jeong, Changwook
• Jariwala, Deep
• Cheon, Yeryun
• Kwak, Jinsung
• Jin, Young Ho
• Lynch, Jason
• Yoon, Aram

Abstract

<jats:title>Abstract</jats:title><jats:p>High-performance <jats:italic>p</jats:italic>-type two-dimensional (2D) transistors are fundamental for 2D nanoelectronics. However, the lack of a reliable method for creating high-quality, large-scale <jats:italic>p</jats:italic>-type 2D semiconductors and a suitable metallization process represents important challenges that need to be addressed for future developments of the field. Here, we report the fabrication of scalable <jats:italic>p</jats:italic>-type 2D single-crystalline 2H-MoTe<jats:sub>2</jats:sub> transistor arrays with Fermi-level-tuned 1T’-phase semimetal contact electrodes. By transforming polycrystalline 1T’-MoTe<jats:sub>2</jats:sub> to 2H polymorph via abnormal grain growth, we fabricated 4-inch 2H-MoTe<jats:sub>2</jats:sub> wafers with ultra-large single-crystalline domains and spatially-controlled single-crystalline arrays at a low temperature (~500 °C). Furthermore, we demonstrate on-chip transistors by lithographic patterning and layer-by-layer integration of 1T’ semimetals and 2H semiconductors. Work function modulation of 1T’-MoTe<jats:sub>2</jats:sub> electrodes was achieved by depositing 3D metal (Au) pads, resulting in minimal contact resistance (~0.7 kΩ·μm) and near-zero Schottky barrier height (~14 meV) of the junction interface, and leading to high on-state current (~7.8 μA/μm) and on/off current ratio (~10<jats:sup>5</jats:sup>) in the 2H-MoTe<jats:sub>2</jats:sub> transistors.</jats:p>

Topics

• grain
• phase
• semiconductor
• two-dimensional
• grain growth