• Noguchi, Shun
• Shiogai, Junichi
• Tsukazaki, Atsushi
• Fujiwara, Kohei

Abstract

<jats:title>Abstract</jats:title><jats:p>Amorphous semiconductors are widely applied to electronic and energy-conversion devices owing to their high performance and simple fabrication processes. The topological concept of the Berry curvature is generally ill-defined in amorphous solids, due to the absence of long-range crystalline order. Here, we demonstrate that the Berry curvature in the short-range crystalline order of kagome-lattice fragments effectively contributes to the anomalous electrical and magneto-thermoelectric properties in Fe–Sn amorphous films. The Fe–Sn films on glass substrates exhibit large anomalous Hall and Nernst effects comparable to those of the single crystals of topological semimetals Fe<jats:sub>3</jats:sub>Sn<jats:sub>2</jats:sub> and Fe<jats:sub>3</jats:sub>Sn. With modelling, we reveal that the Berry curvature contribution in the amorphous state likely originates from randomly distributed kagome-lattice fragments. This microscopic interpretation sheds light on the topology of amorphous materials, which may lead to the realization of functional topological amorphous electronic devices.</jats:p>

Topics

• impedance spectroscopy
• single crystal
• amorphous
• thin film
• glass
• semiconductor
• glass