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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Seregni, Mattia
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article
Disordered zero-index metamaterials based on metal-induced crystallization
Abstract
<jats:title>Abstract</jats:title><jats:p>Zero-index (ZI) materials are synthetic optical materials with a vanishing effective permittivity and/or permeability at a given design frequency. Recently, it has been shown that the permeability of a zero-index host material can be deterministically tuned by adding photonic dopants. Here, we apply metal-induced crystallization (MIC) in quasi-random metal–semiconductor composites to fabricate large-area zero-index materials. Using Ag–Si as a model system, we demonstrate that the localized crystallization of the semiconductor at the metal/semiconductor interface can be used as a design parameter to control light interaction in such a disordered system. The induced crystallization generates new zero-index states corresponding to a hybridized plasmonic mode emerging from selective coupling of light to the Ångstrom-sized crystalline shell of the semiconductor. Photonic doping can be used to enhance the transmission in these disordered metamaterials, as shown by simulations. Our results establish novel large-area zero-index materials for wafer-scale applications and beyond.</jats:p>