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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Adelmann, C.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2017Thickness dependence of the resistivity of platinum-group metal thin filmscitations
- 2010Strontium niobate high-k dielectrics: Film deposition and material propertiescitations
- 2010Atomic Layer Deposition of Gd-Doped HfO2 Thin Filmscitations
- 2009Equivalent Oxide Thickness Reduction for High-k Gate Stacks by Optimized Rare-Earth Silicate Reactions
- 2009Study of interfacial reactions and phase stabilization of mixed Sc, Dy, Hf high-k oxides by attenuated total reflectance infrared spectroscopycitations
- 2009Alternative high-k dielectrics for semiconductor applicationscitations
- 2008Aqueous solution-gel preparation of ultrathin ZrO2 films for gate dielectric applicationcitations
- 2006Epitaxial growth and characterization of single crystal ferromagnetic shape memory Co2NiGa filmscitations
- 2006Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devicescitations
- 2005Electron Spin Dynamics and Hyperfine Interactions in Fe/Al_0.1Ga_0.9As/GaAs Spin Injection Heterostructurescitations
- 2004Spin injection from the Heusler alloy Co_2MnGe into Al_0.1Ga_0.9As/GaAs heterostructurescitations
- 2001Growth and characterization of self-assembled cubic quantum dotscitations
- 2001Strain relaxation in (0001)AlN/GaN heterostructurescitations
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document
Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
Abstract
A longstanding goal of research in semiconductor spintronics is the ability to inject, modulate, and detect electron spin in a single device. A simple prototype consists of a lateral semiconductor channel with two ferromagnetic contacts, one of which serves as a source of spin-polarized electrons and the other as a detector. Based on work in analogous metallic systems, two important criteria have emerged for demonstrating electrical detection of spin transport. The first is the measurement of a non-equilibrium spin population using a non-local ferromagnetic detector through which no charge current flows. The potential at the detection electrode should be sensitive to the relative magnetizations of the detector and the source electrodes, a property referred to as the spin-valve effect. A second and more rigorous test is the existence of a Hanle effect, which is the modulation and suppression of the spin valve signal due to precession and dephasing in a transverse magnetic field. Here we report on the observation of both the spin valve and Hanle effects in lateral devices consisting of epitaxial Fe Schottky tunnel barrier contacts on an n-doped GaAs channel. The dependence on transverse magnetic field, temperature, and contact separation are in good agreement with a model incorporating spin drift and diffusion. Spin transport is detected for both directions of current flow through the source electrode. The sign of the electrical detection signal is found to vary with the injection current and is correlated with the spin polarization in the GaAs channel determined by optical measurements. These results therefore demonstrate a fully electrical scheme for spin injection, transport, and detection in a lateral semiconductor device. ; Comment: Single PDF file with 4 Figures + supplementary information; submitted to Nature Physics 11/06