| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Novoselov, Kostya S.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (26/26 displayed)
- 2024Resonant band hybridization in alloyed transition metal dichalcogenide heterobilayerscitations
- 2024Wandering principal optical axes in van der Waals triclinic materialscitations
- 2024Resonant Band Hybridization in Alloyed Transition Metal Dichalcogenide Heterobilayers.
- 2024DNA‐rGO Aerogel Bioanodes with Microcompartmentalization for High‐Performance Bioelectrochemical Systemscitations
- 20233D Printed Carbon Framework with the Graphene Aerogel for Microbial Fuel Cell Application
- 2021Sustainable and multifunctional composites of graphene‐based natural jute fiberscitations
- 2020Highly conductive, scalable, and machine washable graphene-based e-textiles for multifunctional wearable electronic applicationscitations
- 2020Emergence of Highly Linearly Polarized Interlayer Exciton Emission in MoSe2/WSe2 Heterobilayers with Transfer-Induced Layer Corrugationcitations
- 2020Emergence of Highly Linearly Polarized Interlayer Exciton Emission in MoSe 2 /WSe 2 Heterobilayers with Transfer-Induced Layer Corrugationcitations
- 2020Highly Conductive, Scalable and Machine Washable Graphene-Based E-Textiles for Multifunctional Wearable Electronic Applicationscitations
- 2019Ultrahigh performance of nanoengineered graphene-based natural jute fiber compositescitations
- 2019Ultra-high performance of nano-engineered graphene-based natural jute fiber compositescitations
- 2018High Performance Graphene-Based Natural Fibre Compositescitations
- 2018Infrared-to-violet tunable optical activity in atomic films of GaSe, InSe, and their heterostructurescitations
- 2018High-performance graphene-based natural fiber compositescitations
- 2018Mechanism of Gold-Assisted Exfoliation of Centimeter-Sized Transition-Metal Dichalcogenide Monolayerscitations
- 2018Growth of graphene on tantalum and its protective propertiescitations
- 2017Observing imperfection in atomic interfaces for van der Waals heterostructurescitations
- 2016High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSecitations
- 2015Deformation of Wrinkled Graphenecitations
- 2013Reversible loss of bernal stacking during the deformation of few-layer graphene in nanocompositescitations
- 2012Optimizing the reinforcement of polymer-based nanocomposites by graphenecitations
- 2011Strain mapping in a graphene monolayer nanocompositecitations
- 2011Development of a universal stress sensor for graphene and carbon fibrescitations
- 2010Interfacial stress transfer in a graphene monolayer nanocompositecitations
- 2007Breakdown of the adiabatic Born-Oppenheimer approximation in graphenecitations
Places of action
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article
High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe
Abstract
A decade of intense research on two‐dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum confinement and are most profound if the underlying lattice symmetry changes3,4. Here we report a high‐quality 2D electron gas in few‐layer<br/>InSe encapsulated in hexagonal boron nitride under an inert atmosphere. Carrier mobilities are found to exceed 103 and 104 cm2/Vs at room and liquid‐helium temperatures, respectively, allowing the observation of the fully‐developed quantum Hall effect. The conduction electrons occupy a single 2D sub‐band and have a small effective mass. Photoluminescence spectroscopy reveals that the<br/>bandgap increases by more than 0.5 eV with decreasing the thickness from bulk to bilayer InSe. The band‐edge optical response vanishes in monolayer InSe, which is attributed to monolayer’s mirrorplane symmetry. Encapsulated 2D InSe expands the family of graphene‐like semiconductors and, in terms of quality, is competitive with atomically‐thin dichalcogenides5,6,7 and black phosphorus