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| Naji, M. |
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Pezzini, Sergio
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Publications (6/6 displayed)
- 2024Decoupled High‐Mobility Graphene on Cu(111)/Sapphire via Chemical Vapor Depositioncitations
- 2024Gate-Switchable Molecular Diffusion on a Graphene Field-Effect Transistor
- 2020Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides.
- 2016High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSecitations
- 2016High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSecitations
- 2016High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSecitations
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article
High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe
Abstract
A decade of intense research on two‐dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum confinement and are most profound if the underlying lattice symmetry changes3,4. Here we report a high‐quality 2D electron gas in few‐layer<br/>InSe encapsulated in hexagonal boron nitride under an inert atmosphere. Carrier mobilities are found to exceed 103 and 104 cm2/Vs at room and liquid‐helium temperatures, respectively, allowing the observation of the fully‐developed quantum Hall effect. The conduction electrons occupy a single 2D sub‐band and have a small effective mass. Photoluminescence spectroscopy reveals that the<br/>bandgap increases by more than 0.5 eV with decreasing the thickness from bulk to bilayer InSe. The band‐edge optical response vanishes in monolayer InSe, which is attributed to monolayer’s mirrorplane symmetry. Encapsulated 2D InSe expands the family of graphene‐like semiconductors and, in terms of quality, is competitive with atomically‐thin dichalcogenides5,6,7 and black phosphorus