| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Geim, Andre
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2020Capillary condensation under atomic-scale confinementcitations
- 2019Planar and van der Waals heterostructures for vertical tunnelling single electron transistorscitations
- 2019Molecular streaming and its voltage control in ångström-scale channelscitations
- 2018Unusual Suppression of the Superconducting Energy Gap and Critical Temperature in Atomically Thin NbSe2citations
- 2018Indirect excitons in van der Waals heterostructures at room temperaturecitations
- 2017Edge currents shunt the insulating bulk in gapped graphenecitations
- 2017Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphenecitations
- 2017Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphenecitations
- 2017Intercalant‐independent transition temperature in superconducting black phosphoruscitations
- 2016High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSecitations
- 2016High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSecitations
- 2014Impermeable barrier films and protective coatings based on reduced graphene oxidecitations
Places of action
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article
High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe
Abstract
A decade of intense research on two‐dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum confinement and are most profound if the underlying lattice symmetry changes3,4. Here we report a high‐quality 2D electron gas in few‐layer<br/>InSe encapsulated in hexagonal boron nitride under an inert atmosphere. Carrier mobilities are found to exceed 103 and 104 cm2/Vs at room and liquid‐helium temperatures, respectively, allowing the observation of the fully‐developed quantum Hall effect. The conduction electrons occupy a single 2D sub‐band and have a small effective mass. Photoluminescence spectroscopy reveals that the<br/>bandgap increases by more than 0.5 eV with decreasing the thickness from bulk to bilayer InSe. The band‐edge optical response vanishes in monolayer InSe, which is attributed to monolayer’s mirrorplane symmetry. Encapsulated 2D InSe expands the family of graphene‐like semiconductors and, in terms of quality, is competitive with atomically‐thin dichalcogenides5,6,7 and black phosphorus